Towards industrially feasible high-efficiency n-type Si solar cells with boron-diffused front side emitter - Combining firing stable Al2O 3 passivation and fine-line printing

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3587-3592

  Richter, A ^a   Horteis M ^a   Benick, J ^a   Henneck, S ^a   Hermle, M ^a   Glunz, S W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SURFACE FIELDS; BORON-DOPED; CONTACT FORMATION; CONTACT INTERFACE; CONTACTING TECHNOLOGY; FILL FACTOR; FIRING PROCESS; FIRING STABILITY; FIRING TEMPERATURE; HIGH EFFICIENCY; LAYER STACKS; LINE PRINTING; SEED LAYER; SEM MICROGRAPHS; SI SOLAR CELLS; SPECIFIC CONTACT RESISTANCES; TEST STRUCTURE;

ALUMINUM; BORON; CONVERSION EFFICIENCY; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; SILICON NITRIDE; SILICON SOLAR CELLS; SOLAR CELLS;

PASSIVATION;

EID: 78650112497     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614369     Document Type: Conference Paper

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