Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Solar Energy Materials and Solar Cells

Volumn 93, Issue 8, 2009, Pages 1281-1289

  Lelievre J F ^a   Fourmond, E ^a   Kaminski, A ^a   Palais, O ^b   Ballutaud, D ^c   Lemiti, M ^a  

^a UNIVERSITÉ DE LYON   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

Hydrogenation; Passivation; PECVD; Silicon nitride

Indexed keywords

BOND TYPE; BULK DEFECTS; BULK PASSIVATION; CHEMICAL VAPOUR DEPOSITION; DEPOSITION SYSTEMS; EFFICIENT SURFACE; HIGH-TEMPERATURE TREATMENT; HYDROGEN CONCENTRATION; HYDROGEN DESORPTION; HYDROGENATED SILICON; LITERATURE DATA; LOW FREQUENCY; LOW REFRACTIVE INDEX; P-TYPE SI; PECVD; SI SUBSTRATES; SILICON SUBSTRATES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CHEMICAL ANALYSIS; DESORPTION; HYDROGEN; HYDROGENATION; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON; STOICHIOMETRY; SURFACE DEFECTS;

SILICON NITRIDE;

EID: 67349115660     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.01.023     Document Type: Article

References (44)

1. Duerinckx F., and Szulfcik J. Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride. Solar Energy Materials and Solar Cells 72 (2002) 231-246
2. Leguit C., et al. Low temperature surface passivation for silicon solar cells. Solar Energy Materials and Solar Cells 40 (1996) 297-345
3. Aberle A.G. Overview on SiN surface passivation of crystalline silicon solar cells. Solar Energy Materials and Solar Cells 65 (2001) 239-248
4. B. Sopori, et al., A comprehensive model of hydrogen transport into a solar cell during silicon nitride processing for fire-through metallization, in: Proceedings of the 31st Photovoltaic Specialists Conference, Orlando, USA, January 2005, pp. 1039-1042.
5. T. Lauinger, A.G. Aberle, R. Hezel, Comparison of direct and remote PECVD silicon nitride films for low-temperature surface passivation of p-type crystalline silicon, in: Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 1997, p. 853.
6. x:H-induced hydrogenation in high efficiency string ribbon silicon solar cells, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, France, 2004, pp. 951-954.
7. Hong J., et al. Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells. Journal of Vacuum Science and Technology B 21 5 (2003) 2123-2132
8. Dekkers H.F.W., Beaucarne G., Hiller M., Charifi H., and Slaoui A. Molecular hydrogen formation in hydrogenated silicon nitride. Applied Physics Letters 89 (2006) 211914 (3 pages)
9. x layers for high-quality silicon surface passivation. Journal of Applied Physics 92 5 (2002) 2602-2609
10. A. Cuevas, M.J. Kerr, J. Schmidt, Passivation of crystalline silicon using silicon nitride, in: Third World Conference on Photovoltaic Energy Conversion, Osaka, Japan, May 2003.
11. Sopori B. Dielectric films for Si solar cell applications. Journal of Electronic Materials 34 5 (2005) 564-570
12. J.Y. Lee, J. Divker, S. Rein, S.W. Glunz, Investigation of various surface passivation layers using oxide/nitride stacks of silicon solar cells, in: Proceedings of the Third World Conference on Photovoltaic Energy Conversion, Osaka, Japan, May 2003.
13. Lanford W.A., and Rand M.J. The hydrogen content of plasma-deposited silicon nitride. Journal of Applied Physics 49 4 (1978) 2473-2477
14. x:H, in: Proceedings of the Third World Conference on Photovoltaic Energy Conversion, Osaka, Japan, May 2003, p. 1158.
15. x:H in Industrial Solar Cell Processing, IMEC, Leuven, Belgium, 3 November 2005. Available from: 〈http://www.ipcrystalclear.info/Paginas/Overige%20webpaginas/Progra mme%20and%20presentations%20SiNx%20fundamentals%20workshop.aspx〉 (last consultation 23/05/08).
16. x:H: magic or physics, in: Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, June 2005, pp. 1352-1355.
17. A. Cuevas, F. Chen, J. Tan, H. Mäckel, S. Winderbaum, K. Roth, FTIR analysis of microwave excited PECVD silicon nitride, in: Proceedings of the Fourth World Conference on Photovoltaic Energy Conversion, Waikoloa, USA, 2006, pp. 1148-1151.
18. F. Chen, I. Romijn, A. Weeber, J. Tan, B. Hallam, J. Cotter, Relationship between PECVD silicon nitride film composition and surface and edge passivation, in: Proceedings of the of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, pp. 1053-1060.
19. G.E. Jellison, F.A. Modine, Parameterization of the optical functions of amorphous materials in the interband region, Applied Physics Letters 69 (3) (1996) 371-373; erratum: 69 (14) (1996) 2137.
20. x:H by PECVD: optical, structural and passivation properties for photovoltaic applications, Ph.D. Thesis, INSA de Lyon, University of Lyon France, 2007, 197pp. Available from: 〈http://docinsa.insa-lyon.fr/these/2007/lelievre/these.pdf〉.
21. Nicollian E.H., and Brews J.R. MOS Physics and Technology (1982), Wiley-Interscience, New York
22. Sinton R.A., and Cuevas A. Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data. Applied Physics Letters 69 17 (1996) 2510-2512
23. Cuevas A., and Macdonald D. Measuring and interpreting the lifetime of silicon wafers. Solar Energy 76 1-3 (2004) 255-262
24. F. Schuurmans, Surface passivation of silicon by PECVD silicon nitride, Ph.D. Thesis, University of Utrecht, The Netherlands, 1998, 134pp.
25. Palais O., and Arcari A. Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers. Journal of Applied Physics 93 8 (2003) 4686-4690
26. Cuevas A., Stocks M., Mcdonald D., Kerr M., and Samundsett C. Recombination and trapping in multicrystalline silicon. IEEE Transactions on Electron Devices 46 10 (1999) 2026-2034
27. 4) (noncrystalline). In: Palik E.D. (Ed). Handbook of Optical Constants of Solid vol. 1 (1985), Academic Press, New York, USA 771-774
28. x films and silicon substrate roughness on surface passivation. Journal of Applied Physics 97 (2005) 063303 (8 pages)
29. x:H deposited by PECVD, in: Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, June 2005, pp. 1142-1145.
30. Dollet A., Couderc J.P., and Despax B. Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapor deposition reactor. Part I: bidimensional modelling. Plasma Sources Science and Technology 4 (1995) 94-106
31. y: comparison between two reactor designs. Journal of Vacuum Science and Technology A 14 4 (1996) 2071-2082
32. z alloys: a quantitative bonding analysis. Physical Review B 38 12 (1998) 8171-8183
33. Stefan Dauwe, Low temperature surface passivation of crystalline silicon and its application to the rear side of solar cells, Ph.D. Thesis, Hannover Universität, Germany, 2004, p. 76.
34. x:H antireflection coatings for silicon solar cells, in: Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Orlando, USA, 2005, pp. 1111-1114.
35. x:H thin films deposited by PECVD or UVCVD. Thin Solid Films 511-512 (2006) 103-107
36. x:H films by infrared spectroscopy and hydrogen forward scattering results. Journal of Non-Crystalline Solids 187 (1995) 308-312
37. x:H in Industrial Solar Cell Processing, IMEC, Leuven, Belgium, 3 November 2005. Presentation available on-line (see Ref. [18]).
38. Yin Z., and Smith F.W. Optical dielectric function and infrared absorption of hydrogenated amorphous silicon nitride films: experimental results and effective-medium-approximation analysis. Physical Review B 42 6 (1990) 3666-3675
39. x(H) films: characterization of H introduced into the Si. Applied Physics Letters 83 5 (2003) 931-933
40. Robertson J., Warren W.L., and Kanicki J. Nature of Si and N dangling bonds in silicon nitride. Journal of Non-Crystalline Solids 187 (1995) 297-300
41. Schmidt J., and Aberle A.G. Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma enhanced chemical vapor deposition. Journal of Applied Physics 85 7 (1998) 3626-3633
42. 2 interface. Journal of Applied Physics 58 (1985) 4267-4276
43. x:H in Industrial Solar Cell Processing, IMEC, Leuven, Belgium, 3 November 2005. Presentation available on-line (see Ref. [18]).
44. Schmidt J., and Kerr M. Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride. Solar Energy and Solar Cells 65 (2001) 585-591