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Volumn , Issue , 2002, Pages 162-165

Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC SPACE CHARGE; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; SILICON WAFERS;

EID: 0036953415     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2002.1190481     Document Type: Conference Paper
Times cited : (80)

References (13)
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    • J. Schmidt and A.G. Aberle, "Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition", J. Appl. Phys. 85, 1999, pp. 3626-3633.
    • (1999) J. Appl. Phys. , vol.85 , pp. 3626-3633
    • Schmidt, J.1    Aberle, A.G.2
  • 4
    • 0004277486 scopus 로고
    • MOS physics and technology
    • Wiley, New York
    • E.H. Nicollian and J.R. Brews, "MOS physics and technology", Wiley, New York, 1982.
    • (1982)
    • Nicollian, E.H.1    Brews, J.R.2
  • 5
    • 0002554308 scopus 로고
    • Contact electricity of metals
    • Lord Kelvin, "Contact electricity of metals", Philos. Mag. 46, 1898, pp. 82-120.
    • (1898) Philos. Mag. , vol.46 , pp. 82-120
    • Kelvin, L.1
  • 7
    • 0344546107 scopus 로고
    • Light-biased photoconductance decay measurements on silicon nitride passivated silicon wafers
    • J. Schmidt, T. Lauinger, A.G. Aberle, and R. Hezel, "Light-biased photoconductance decay measurements on silicon nitride passivated silicon wafers", 13th EPVSEC Nice, 1995, pp. 1287-1290.
    • (1995) 13th EPVSEC Nice , pp. 1287-1290
    • Schmidt, J.1    Lauinger, T.2    Aberle, A.G.3    Hezel, R.4
  • 8
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • R.A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data", Appl. Phys. Lett. 69, 1996, pp. 2510-2512.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2510-2512
    • Sinton, R.A.1    Cuevas, A.2
  • 9
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of Auger recombination in crystalline silicon
    • M.J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon", J. Appl. Phys. 91(4), 2002, pp. 2473-2480.
    • (2002) J. Appl. Phys. , vol.91 , Issue.4 , pp. 2473-2480
    • Kerr, M.J.1    Cuevas, A.2
  • 10
    • 3943074854 scopus 로고
    • Corona charging of insulated surfaces and the application in the photovoltaic
    • A. Beyer, M. Rennau, and G. Ebest, "Corona charging of insulated surfaces and the application in the photovoltaic", 13th EPVSEC Nice, 1995, pp. 1254-1257.
    • (1995) 13th EPVSEC Nice , pp. 1254-1257
    • Beyer, A.1    Rennau, M.2    Ebest, G.3
  • 12
    • 0000962572 scopus 로고    scopus 로고
    • Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition
    • J. Schmidt, F.M. Schuurmans, W.C. Sinke, S.W. Glunz, and A.G. Aberle, "Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition", Appl. Phys. Lett. 71, 1997, pp. 252-254.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 252-254
    • Schmidt, J.1    Schuurmans, F.M.2    Sinke, W.C.3    Glunz, S.W.4    Aberle, A.G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.