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Volumn 360, Issue 1, 2012, Pages 56-60
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State-of-the-art growth of silicon for PV applications
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Author keywords
A1. Solidification; A2. Bridgman technique; A2. Czochralski method; A2. Edge defined film fed growth; A2. Gradient freeze technique; B3. Solar cells
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Indexed keywords
BRIDGMAN PROCESS;
BRIDGMAN TECHNIQUES;
CRYSTALLIZATION PROCESS;
DEFECT-FREE;
DIRECT SOLAR;
EDGE DEFINED FILM FED GROWTH;
FLOAT ZONES;
GRADIENT FREEZE TECHNIQUES;
IMPURITY CONTAMINATION;
IMPURITY LEVEL;
MICRO-SEGREGATION;
MICROSTRUCTURAL DEFECTS;
MULTI-CRYSTALLINE SILICON;
PHOTOVOLTAIC DEVICES;
PLANAR SOLIDIFICATION;
SOLIDIFICATION PROCESS;
CRYSTAL GROWTH FROM MELT;
DEFECTS;
FILM GROWTH;
POLYSILICON;
SOLAR CELLS;
SOLIDIFICATION;
SILICON WAFERS;
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EID: 84867487859
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.03.024 Document Type: Conference Paper |
Times cited : (29)
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References (22)
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