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Volumn 360, Issue 1, 2012, Pages 56-60

State-of-the-art growth of silicon for PV applications

Author keywords

A1. Solidification; A2. Bridgman technique; A2. Czochralski method; A2. Edge defined film fed growth; A2. Gradient freeze technique; B3. Solar cells

Indexed keywords

BRIDGMAN PROCESS; BRIDGMAN TECHNIQUES; CRYSTALLIZATION PROCESS; DEFECT-FREE; DIRECT SOLAR; EDGE DEFINED FILM FED GROWTH; FLOAT ZONES; GRADIENT FREEZE TECHNIQUES; IMPURITY CONTAMINATION; IMPURITY LEVEL; MICRO-SEGREGATION; MICROSTRUCTURAL DEFECTS; MULTI-CRYSTALLINE SILICON; PHOTOVOLTAIC DEVICES; PLANAR SOLIDIFICATION; SOLIDIFICATION PROCESS;

EID: 84867487859     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.024     Document Type: Conference Paper
Times cited : (29)

References (22)
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    • Vacancy-type microdefect formation in Czochralski silicon
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.