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Volumn 99, Issue 20, 2011, Pages

High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

(6) Schttauf, Jan Willem A a Van Der Werf, Karine H M a Kielen, Inge M a Van Sark, Wilfried G J H M a Rath, Jatindra K a Schropp, Ruud E I a

a UTRECHT UNIVERSITY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ANNEALING TEMPERATURES; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICONS; FIELD EFFECT PASSIVATION; HIGH QUALITY; HYDROGEN EFFUSION; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; INJECTION LEVELS; LAYER STACKS; MINORITY CARRIER LIFETIMES; SURFACE PASSIVATION; THERMAL-ANNEALING;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; HYDROGEN; HYDROGENATION; PASSIVATION; SILICON;

AMORPHOUS SILICON;

EID: 81855187138 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3662404 Document Type: Article

Times cited : (29)

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