High efficiency n-type Si solar cells on Al2O 3-passivated boron emitters

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Benick, Jan ^a   Hoex, Bram ^b   Van De Sanden, M C M ^b   Kessels, W M M ^b   Schultz, Oliver ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DIRECT ENERGY CONVERSION; NONMETALS; OPTICAL DESIGN; PHOTOVOLTAIC CELLS; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

DIELECTRIC LAYERS; EXPERIMENTAL STUDIES; HIGH-EFFICIENCY; N-TYPE SILICON; SI SOLAR CELLS; TEST STRUCTURES;

PASSIVATION;

EID: 46049090010     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945287     Document Type: Article

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