Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 761-764

  Munoz D ^a   Voz, C ^a   Martin, I ^a   Orpella, A ^a   Puigdollers, J ^a   Alcubilla, R ^a   Villar, F ^b   Bertomeu, J ^b   Andreu, J ^b   Damon Lacoste, J ^c   Roca i Cabarrocas, P ^c  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Heterostructure; Hot wire deposition; Solar cell

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; HYDROGEN; HYDROGENATION; OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

AMORPHOUS SILICON BUFFER LAYERS; HETEROJUNCTION EMITTERS; HETEROJUNCTION SOLAR CELLS; HOT WIRE DEPOSITION;

HETEROJUNCTIONS;

EID: 36849092502     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.192     Document Type: Article

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