Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Hoex, B ^a   Heil, S B S ^a   Langereis, E ^a   Van De Banden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; PASSIVATION; PLASMA APPLICATIONS; SOLAR CELLS; SURFACE PROPERTIES;

C-SI; PLASMA-ASSISTED ATOMIC LAYER DEPOSITION; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

SILICON;

EID: 33746593811     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2240736     Document Type: Article

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