Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology

Progress in Photovoltaics: Research and Applications

Volumn 16, Issue 4, 2008, Pages 317-324

  Schultz, Oliver ^a   Mette, Ansgar ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Crystalline silicon solar cells; High efficiency cells; Metallisation; Silicon oxide

Indexed keywords

ALUMINUM; ALUMINUM CLADDING; ANNEALING; CHEMICAL OXYGEN DEMAND; COST EFFECTIVENESS; DIRECT ENERGY CONVERSION; LIGHT METALS; OXIDATION; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; POLYSILICON; PRECIOUS METALS; SCREEN PRINTING; SILICON; SILICON SOLAR CELLS; SILVER; SILVER PLATING; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; STANDARDS; THERMODYNAMIC STABILITY;

(100) SILICON; (PL) PROPERTIES; APPLIED (CO); BEST VALUE; CONTACT FORMATION; CRYSTALLINE SILICON SOLAR CELLS; DRY OXIDATION; HIGH EFFICIENCY; HIGH TEMPERATURE FIRING; HOT MELT (HM); IN ORDER; MONOCRYSTALLINE (MD); MULTICRYSTALLINE SILICON (MC-SI); OXIDATION PROCESSES; PROCESS TECHNOLOGIES; SCREEN PRINTING PROCESS; SILVER PASTES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; THERMAL STABILITY; THIN LAYERING; WET OXIDATION (WO);

PASSIVATION;

EID: 46749130961     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.814     Document Type: Article

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