Progress in high-efficiency emitter-wrap-through cells on medium quality substrates

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1340-1343

  Kray, D ^a   Dicker, J ^a   Osswald, D ^a   Leimenstoll, A ^a   Glunz, S W ^a   Zimmermann, W ^b   Tentscher, K H ^b   Strobl, G ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b RWE POWER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTER-WRAP-THROUGH (EWT) SOLAR CELL; EXPONENTIAL DECAY; MEDIUM QUALITY SUBSTRATES; REAR CONTACTED CELLS (RCC);

DEGRADATION; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; LIGHTING; PASSIVATION; SILICON;

SOLAR CELLS;

EID: 6344235589     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. M. Gee, W. K. Schubert, and P. A. Basore, "Emitter wrap-through solar cell", Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, (IEEE; New York, NY, USA 1993) 265-70
2. S. W. Glunz, J. Knobloch, C. Hebling, and W. Wettling, "The range of high-efficiency silicon solar cells fabricated at Fraunhofer ISE", Proceedings of the 26th IEEE Photovoltaic Specialists Conference, (IEEE; New York, NY, USA 1997) 231-4
3. S. Rein and S. W. Glunz, "Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy", Appl. Phys. Lett. 82, 1054-56(2003)
4. D. Kray, S. Rein, D. Oßwald, E. Schäffer et al., "High-efficiency emitter-wrap-through cells", Proceedings of the 17th European Photovoltaic Solar Energy Conference, (2001) 1299-302
5. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon", J. Appl. Phys. 90, 2397-404(2001)
6. R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi- steady-state photoconductance data", Appl. Phys. Lett. 69, 2510-2(1996)