High efficiency N-type emitter-wrap-through silicon solar cells

IEEE Journal of Photovoltaics

Volumn 1, Issue 1, 2011, Pages 49-53

  Kiefer, Fabian ^a   Ulzhöfer, Christian ^b   Brendemühl, Till ^a   Harder, Nils Peter ^a,c   Brendel, Rolf ^a,c   Mertens, Verena ^d   Bordihn, Stefan ^d   Peters, Christina ^d   Müller, Jörg W ^d  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b SMT Maschinen und Vertriebs GmbH and Co KG   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d Q Cells SE ^*  (Germany)

Author keywords

Emitter wrap through (EWT); n type silicon; silicon solar cells

Indexed keywords

CELL EFFICIENCY; CONTACT OPENING; CURRENT PATHS; DEVICE STRUCTURES; EMITTER SURFACES; EMITTER-WRAP-THROUGH; ENERGY RESEARCH; FILL FACTOR; GERMANY; HAMELIN; HIGH CURRENT DENSITIES; HIGH-EFFICIENCY SOLAR CELLS; N TYPE SILICON; PASSIVATION LAYER; PICOSECOND LASER;

EFFICIENCY; OPEN CIRCUIT VOLTAGE;

SILICON SOLAR CELLS;

EID: 84865174266     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2164953     Document Type: Article

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