Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6552-6559

  Istratov, A A ^a   Buonassisi, T ^a   McDonald, R J ^b   Smith, A R ^b   Schindler, R ^c   Rand, J A ^d   Kalejs, J P ^e   Weber, E R ^f  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^d GE ENERGY   (United States)

^e RWE POWER AG   (Germany)

^f University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSTITIAL STATES; RECOMBINATION ACTIVITY;

AGGLOMERATION; CRYSTALLINE MATERIALS; DIFFUSION; DISSOLUTION; FILM GROWTH; FLUORESCENCE; NEUTRON ACTIVATION ANALYSIS; RADIOISOTOPES; SILICON WAFERS; TRANSITION METALS; X RAY SPECTROSCOPY;

SILICON SOLAR CELLS;

EID: 0344946270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618912     Document Type: Article

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