Controlling the fixed charge and passivation properties of Si(100)/Al 2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Dingemans, G ^a   Terlinden, N M ^a   Verheijen, M A ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE CHARGE; FIELD-EFFECT; FIXED CHARGES; INTERFACIAL LAYER; KEY PARAMETERS; MINORITY CARRIER LIFETIMES; NEGATIVE CHARGE; OPTICAL SECOND HARMONIC GENERATION; PASSIVATION PROPERTIES; SI(1 0 0); SURFACE RECOMBINATION VELOCITIES; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; CARRIER LIFETIME; PASSIVATION; SILICON;

SILICON COMPOUNDS;

EID: 81355132346     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658246     Document Type: Article

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