Silicon surface passivation by atomic layer deposited Al2 O 3

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Hoex, B ^a   Schmidt, J ^b   Pohl, P ^b   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHARGE DENSITY; OZONE WATER TREATMENT; PLASMA DEPOSITION; PLASMAS; PULSED LASER DEPOSITION; SILICON;

AL2 O3 FILMS; SURFACE PASSIVATION;

ATOMIC LAYER DEPOSITION;

EID: 50849137808     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963707     Document Type: Article

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