Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4061-4063

  Macdonald, Daniel ^a   Geerligs, L J ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ION IMPLANTATION; IRON; PHOTOVOLTAIC CELLS; POINT DEFECTS; SEMICONDUCTING FILMS; SILICON NITRIDE; SILICON WAFERS; SOLAR CELLS; SOLIDIFICATION;

BAND GAP; CRYSTALLINE SILICON; LOW-INJECTION LIFETIMES;

SILICON;

EID: 10044269932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812833     Document Type: Article

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