Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1474-1476

  Martin I ^a   Vetter, M ^a   Orpella, A ^a   Voz, C ^a   Puigdollers, J ^a   Alcubilla, R ^a   Kharchenko, A V ^b   Roca i Cabarrocas, P ^b  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; PASSIVATION; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SURFACE PHENOMENA; THERMAL EFFECTS; THIN FILMS; VACUUM;

HYDROGEN PLASMA TREATMENT; WET CLEANING;

SILICON;

EID: 1642603983     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1647702     Document Type: Article

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