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Volumn , Issue , 2005, Pages 1074-1077

Recombination lifetime and trap density variations in multicrystalline silicon wafers through the block

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTALLINE MATERIALS; DIFFUSION; GLASS; PHOSPHORUS; SOLAR CELLS;

EID: 27944506034     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (9)
  • 1
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    • Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length
    • A.A. Istranov et al., "Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length", J. Appl. Phys. 94, 2003, pp. 6552-6559.
    • (2003) J. Appl. Phys. , vol.94 , pp. 6552-6559
    • Istranov, A.A.1
  • 2
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • R.A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data", Appl. Phys. Lett. 69, 1996, pp. 2510-2512.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2510-2512
    • Sinton, R.A.1    Cuevas, A.2
  • 3
    • 0032622269 scopus 로고    scopus 로고
    • Trapping of minority carriers in multicrystalline silicon
    • D. Macdonald and A. Cuevas, "Trapping of minority carriers in multicrystalline silicon", Appl. Phys. Lett. 74, 1999, pp. 1710-1712.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1710-1712
    • Macdonald, D.1    Cuevas, A.2
  • 4
    • 0001323909 scopus 로고
    • Trapping of minority carriers in silicon. I. p-type silicon
    • J. A. Hombeck and J. R. Haynes, "Trapping of minority carriers in silicon. I. p-type silicon", Phys. Rev. 97, 1955, pp. 311-321.
    • (1955) Phys. Rev. , vol.97 , pp. 311-321
    • Hombeck, J.A.1    Haynes, J.R.2
  • 5
    • 0019008113 scopus 로고
    • Impurities in silicon solar cells
    • J.R. Davis et al., "Impurities in silicon solar cells", IEEE Trans. Electron Dev. 27, 1980, pp. 677-689.
    • (1980) IEEE Trans. Electron Dev. , vol.27 , pp. 677-689
    • Davis, J.R.1
  • 6
    • 0037632551 scopus 로고    scopus 로고
    • Boron-related minority carrier trapping centers in p-type silicon
    • D. Macdonald, M. Kerr, and A. Cuevas, "Boron-related minority carrier trapping centers in p-type silicon", Appl. Phys. Lett. 75, 1999, pp. 1571-1573.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 1571-1573
    • Macdonald, D.1    Kerr, M.2    Cuevas, A.3
  • 7
    • 0035203130 scopus 로고    scopus 로고
    • Understanding carrier trapping in multicrystalline silicon
    • D. Macdonald and A. Cuevas, "Understanding carrier trapping in multicrystalline silicon", Sol. Eng. Mat. & Solar Cells 65, 2001, pp. 509-516.
    • (2001) Sol. Eng. Mat. & Solar Cells , vol.65 , pp. 509-516
    • Macdonald, D.1    Cuevas, A.2
  • 8
    • 0001094774 scopus 로고    scopus 로고
    • High minority carrier lifetime in phosphorus-gettered multicrystalline silicon
    • A. Cuevas et al., "High minority carrier lifetime in phosphorus-gettered multicrystalline silicon", Appl. Phys. Lett. 70, 1997, pp. 1017-1019.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1017-1019
    • Cuevas, A.1
  • 9
    • 27944491471 scopus 로고    scopus 로고
    • Phosphorus diffusion and gettering in multi-crystalline silicon solar cell processing
    • A. Bentzen et al., "Phosphorus diffusion and gettering in multi-crystalline silicon solar cell processing", Proc. 19 EUPVSEC, 2004, pp. 935-938.
    • (2004) Proc. 19 EUPVSEC , pp. 935-938
    • Bentzen, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.