Properties of purified direct steam grown silicon thermal oxides

Solar Energy Materials and Solar Cells

Volumn 95, Issue 9, 2011, Pages 2570-2575

  MacK, Sebastian ^a   Wolf, Andreas ^a   Walczak, Alexandra ^a   Thaidigsmann, Benjamin ^a   Allan Wotke, Edgar ^a   Spiegelman, Jeffrey J ^b   Preu, Ralf ^a   Biro, Daniel ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b RASIRC   (United States)

Author keywords

Passivation; PERC; SiO2; Solar cell; Steam; Thermal oxidation

Indexed keywords

DRY OXYGEN; FORMING GAS; HIGH EFFICIENCY; HIGH QUALITY; OXIDATION RATES; OXIDE LAYER; OXYGEN GAS; P-TYPE SUBSTRATES; PERC; PROCESS TIME; QUARTZ TUBES; REAR SURFACES; SILICON SURFACES; SIO2; STATE OF THE ART; STEAM GENERATION; STEAM GENERATION SYSTEM; SURFACE RECOMBINATION VELOCITIES; THERMAL OXIDATION; THERMAL OXIDES; THERMAL SILICON; TUBE FURNACES;

DEIONIZED WATER; OXIDATION; OXYGEN; PASSIVATION; PURIFICATION; PYROLYSIS; QUARTZ; SILICON COMPOUNDS; SILICON OXIDES; STEAM GENERATORS; WATER VAPOR;

STEAM;

EID: 79959304899     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.03.002     Document Type: Article

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