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Volumn 13, Issue 6, 2005, Pages 481-488

Obtaining a higher voc in HIT cells

Author keywords

A Si; C Si; Heterojunction; Solar cell

Indexed keywords

ELECTRIC POTENTIAL; ENERGY EFFICIENCY; HETEROJUNCTIONS; OPTIMIZATION; PASSIVATION; THIN FILMS;

EID: 25144449119     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.646     Document Type: Article
Times cited : (272)

References (20)
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  • 8
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    • Development of HIT solar cells with more than 21% conversion efficiency and commercialization of highest performance HIT modules
    • Osaka
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    • Influence of interface defects on the current-voltage characteristics of amorphous silicon/crystalline silicon heterojunction solar cells
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    • Rösch M, Brüggemann R, Bauer GH. Influence of interface defects on the current-voltage characteristics of amorphous silicon/crystalline silicon heterojunction solar cells. Proceedings of the 2nd WCPEC, Vienna, 1998; 964-967.
    • (1998) Proceedings of the 2nd WCPEC , pp. 964-967
    • Rösch, M.1    Brüggemann, R.2    Bauer, G.H.3
  • 14
    • 0027187313 scopus 로고
    • In situ bulk lifetime measurement on silicon with a chemically passivated surface
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    • Horányi, T.S.1    Pavelka, T.2    Tüttö, P.3
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    • Surface passivation of crystalline silicon wafers by hydrogenated amorphous silicon probed by time resolved surface photovoltage and photoluminescence spectroscopy
    • Paris
    • Laades A, Kliefoth K, Korte L, Brendel K, Stangl R, Schmidt M, Fuhs W. Surface passivation of crystalline silicon wafers by hydrogenated amorphous silicon probed by time resolved surface photovoltage and photoluminescence spectroscopy. Proceedings of the 19th European PVSEC, Paris, 2004; 1170-1173.
    • (2004) Proceedings of the 19th European PVSEC , pp. 1170-1173
    • Laades, A.1    Kliefoth, K.2    Korte, L.3    Brendel, K.4    Stangl, R.5    Schmidt, M.6    Fuhs, W.7
  • 17
    • 0021371798 scopus 로고
    • Electrical Properties of n-amorphous/p-crystalline silicon heterojunctions
    • Matsuura H, Okuno T, Okushi H, Tanaka K. Electrical Properties of n-amorphous/p-crystalline silicon heterojunctions. Journal Applied Physics 1984; 55(4): 1012-1019.
    • (1984) Journal Applied Physics , vol.55 , Issue.4 , pp. 1012-1019
    • Matsuura, H.1    Okuno, T.2    Okushi, H.3    Tanaka, K.4
  • 19
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    • Experiments on Ge-GaAs heterojunctions
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    • Anderson, R.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.