Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1246-1249

  Dauwe, Stefan ^a   Schmidt, Jan ^a   Hezel, Rudolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRIC CONDUCTIVITY; HYDROGEN; OXIDES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SILICON WAFERS; SURFACES; TEMPERATURE; THERMODYNAMIC STABILITY;

HYDROGENATED AMORPHOUS SILICON FILMS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITY;

SILICON SOLAR CELLS;

EID: 0036948749     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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