Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 5-6, 2011, Pages 202-204

  Richter, Armin ^a   Benick, Jan ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Al2O3; Atomic layer deposition; Silicon; Surface passivation

Indexed keywords

A-THERMAL; AL2O3; ATOMIC LAYER; BORON-DOPED SILICON; CAPPING LAYER; CRYSTALLINE SILICON SURFACES; EMITTER SATURATION CURRENT DENSITY; HIGH QUALITY; HIGH TEMPERATURE PROCESS; PASSIVATING LAYER; POST DEPOSITION TREATMENT; SILICON SURFACES; SINGLE LAYER; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; THIN LAYERS;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; BORON; CRYSTALLINE MATERIALS; SILICON NITRIDE;

PASSIVATION;

EID: 79957784836     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105188     Document Type: Article

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