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Volumn 5, Issue 5-6, 2011, Pages 202-204
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Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments
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Author keywords
Al2O3; Atomic layer deposition; Silicon; Surface passivation
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Indexed keywords
A-THERMAL;
AL2O3;
ATOMIC LAYER;
BORON-DOPED SILICON;
CAPPING LAYER;
CRYSTALLINE SILICON SURFACES;
EMITTER SATURATION CURRENT DENSITY;
HIGH QUALITY;
HIGH TEMPERATURE PROCESS;
PASSIVATING LAYER;
POST DEPOSITION TREATMENT;
SILICON SURFACES;
SINGLE LAYER;
SURFACE PASSIVATION;
SURFACE RECOMBINATIONS;
THIN LAYERS;
ALUMINUM;
ATOMIC LAYER DEPOSITION;
ATOMS;
BORON;
CRYSTALLINE MATERIALS;
SILICON NITRIDE;
PASSIVATION;
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EID: 79957784836
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.201105188 Document Type: Article |
Times cited : (102)
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References (19)
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