Effect of a post-deposition anneal ON Al2O3/Si interface properties

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 891-896

  Benick, J ^a   Richter, A ^a   Li, T T A ^b   Grant, N E ^b   McIntosh, K R ^b   Ren, Y ^b   Weber, K J ^b   Hermle, M ^a   Glunz, S W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; AS-DEPOSITED STATE; DOPED SILICON; HIGH DENSITY; INTERFACE PROPERTY; INTERFACE TRAPS; MINORITY CARRIER LIFETIMES; NEGATIVE CHARGE; NEGATIVE FIXED CHARGE; ORDERS OF MAGNITUDE; P-TYPE; POST-DEPOSITION ANNEAL; STRONG FIELD; SURFACE PASSIVATION;

ALUMINUM; CARRIER LIFETIME; PHOTOVOLTAIC EFFECTS;

PASSIVATION;

EID: 78650089183     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614148     Document Type: Conference Paper

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