Grain control using spot cooling in multi-crystalline silicon crystal growth

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 263-267

  Wang, T Y ^a   Hsu, S L ^b   Fei, C C ^a   Yei, K M ^a   Hsu, W C ^b   Lan, C W ^a,c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Sino American Silicon Productions Inc   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

A1. Directional solidification; A1. Purification; A3. Grain growth; B2. Semiconducting materials; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CARRIER LIFETIME; CHARGE CARRIERS; CIVIL AVIATION; COOLING; CRYSTAL GROWTH; CRYSTAL GROWTH FROM MELT; CRYSTALLINE MATERIALS; CRYSTALLIZATION; CRYSTALS; ELECTRON DIFFRACTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; GRAPHITE; GROWTH (MATERIALS); NONMETALS; PHOTOVOLTAIC CELLS; PURIFICATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SOLAR CELLS; SOLAR EQUIPMENT; SOLIDIFICATION;

A1. DIRECTIONAL SOLIDIFICATION; A1. PURIFICATION; A3. GRAIN GROWTH; B2. SEMICONDUCTING MATERIALS; B2. SEMICONDUCTING SILICON; B3. SOLAR CELLS;

GRAIN GROWTH;

EID: 58549104715     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.064     Document Type: Article

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