SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 2, 2002, Pages 1340-1344

Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD

(4) Stannowski, B a Schropp, R E I a Wehrspohn, R B b Powell, M J c

a UTRECHT UNIVERSITY (Netherlands)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; STRESSES;

DEFECT CREATION;

THIN FILM TRANSISTORS;

EID: 0036531038 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)01098-5 Document Type: Article

Times cited : (49)

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