Structure effects on resistive switching of A1/TiOχ/A1 devices for RRAM applications

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 331-333

  Yu, Lee Eun ^a   Kim, Sungho ^a   Ryu, Min Ki ^b   Choi, Sung Yool ^b   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Crossbar structure; Metal insulator metal (MIM); Resistance random access memory (RRAM); Resistive switching; Space charge limited conduction; Via hole structure

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MIM DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SWITCHING; TITANIUM OXIDES;

CROSSBAR STRUCTURE; RESISTANCE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SPACE-CHARGE-LIMITED CONDUCTION; VIA-HOLE STRUCTURE;

RANDOM ACCESS STORAGE;

EID: 41749085966     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.918253     Document Type: Article

References (14)

1. F. Argall, "Switching phenomena in titanium oxide thin films," Solid State Electron., vol. 11, no. 5, pp. 535-541, May 1968.
2. 2 thin films grown by atomic-layer deposition," J. Appl. Phys., vol. 98, no. 3, p. 033715, Aug. 2005.
3. J. F. Gibbons and W. E. Beadle, "Switching properties of thin NiO films," Solid State Electron., vol. 7, no. 11, pp. 785-790, Nov. 1964.
4. I. G. Back, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon, "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., 2004, pp. 587-590.
5. S. Seo M. J. Lee, D. H. Seo, S. K. Choi, D.-S. Sub, Y. S. Joung, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, and B. H. Park, "Conductivity switching characteristics and reset currents in NiO films," Appl. Phys. Lett., vol. 86, no. 9, p. 093 509, Feb. 2005.
6. 3 interface," Appl. Phys. Lett. vol. 83, no. 5, pp. 957-959, Aug. 2003.
7. 3 interface," Appl. Phys. Lett., vol. 85, no. 18, pp. 4073-4075, Nov. 2004.
8. 3 thin film at room temperature," Phys. Rev. B, Condens. Matter, vol. 70, no. 22, p. 224 403, Dec. 2004.
9. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, Jul. 2000.
10. 3 single crystals," Appl. Phys. Lett., vol. 78, no. 23, pp. 3738-3740, Jun. 2001.
11. H. Y. Jeong, M. K. Ryu, S.-Y. Choi, and J. Y. Lee, "Analytical transmission electron microscopy study on the oxygen defect formation of Ti oxide thin films sandwiched between A1 electrodes," in Proc. MRS Spring Meeting, 2007, p. 242.
12. M. A. Lampert and P. Mark, Current Injection in Solids. New York: Academic, p. 1970.
13. xO-metal heterostructures," Appl. Phys. Lett., vol. 90, no. 4, 042 107, Jan. 2007.
14. Y. Xia, W. He, L. Chen, X. Meng, and Z. Liu, "Field-induced resistive switching based on space-charge-limited current," Appl. Phys. Lett. vol. 90, no. 2, p. 022907, Jan. 2007.