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Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films

(3) Jeong, Hu Young a Lee, Jeong Yong a Choi, Sung Yool b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TIO; AMORPHOUS TITANIUM OXIDE; CONDUCTING PATHS; DIRECT OBSERVATION; FAILURE MECHANISM; FILM DEPOSITION TEMPERATURE; HIGH TEMPERATURE SAMPLES; INTERFACE LAYER; LOCAL CLUSTERING; LOW TEMPERATURES; NON-HOMOGENEOUS; RESISTIVE SWITCHING; TIO;

AMORPHOUS FILMS; MOS DEVICES; OXIDE FILMS; OXYGEN; TITANIUM; TITANIUM OXIDES; VACANCIES;

OXYGEN VACANCIES;

EID: 77955721384 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3467854 Document Type: Article

Times cited : (41)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.