Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

Applied Physics A: Materials Science and Processing

Volumn 93, Issue 2, 2008, Pages 409-414

  Dong, R ^a   Lee, D S ^a   Pyun, M B ^a   Hasan, M ^a   Choi, H J ^a   Jo, M S ^a   Seong, D J ^a   Chang, M ^a   Heo, S H ^a   Lee, J M ^a   Park, H K ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; DATA STORAGE EQUIPMENT; ELASTICITY; HYSTERESIS; OXIDE MINERALS; SEMICONDUCTOR DEVICE MANUFACTURE; TITANIUM OXIDES;

CURRENT HYSTERESIS; RESISTANCE SWITCHING; REVERSIBLE RESISTANCE SWITCHING; SEMICONDUCTOR TECHNOLOGIES;

SEMICONDUCTOR MATERIALS;

EID: 51649091348     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4782-x     Document Type: Article

References (23)

1. International Technology Roadmap for Semiconductors (ITRS, 2006). http://www.itrs.net/reports.html
2. S.T. Hsu, T.K. Li, N. Awaya, J. Appl. Phys. 101, 024517 (2007)
3. A. Beck, J.G. Bednorz, C. Gerber, Ch. Rossel, D. Widmer, Appl. Phys. Lett. 77, 139 (2000)
4. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 5, 312 (2006)
5. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M.J. Lee, S.A. Seo, I.K. Yoo, IEEE Electron Device Lett. 26, 719 (2005)
6. R. Dong, Q. Wang, L.D. Chen, D.S. Shang, T.L. Chen, X.M. Li, W.Q. Zhang, Appl. Phys. Lett. 86, 172107 (2005)
7. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, N. Awaya, Appl. Phys. Lett. 89, 223509 (2006)
8. A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004)
9. R. Dong, D.S. Lee, W.F. Xiang, S.J. Oh, D.J. Seong, S.H. Heo, H.J. Choi, M.J. Kwon, S.N. Seo, M.B. Pyun, M. Hasan, H.S. Hwang, Appl. Phys. Lett. 90, 042107 (2007)
10. A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, H. Adachi, Phys. Rev. B 70, 224403 (2004)
11. M.J. Rozenberg, I.H. Inoue, M.J. Sánchez, Phys. Rev. Lett. 92, 178302-1 (2004)
12. D.S. Lee, D.J. Seong, H.J. Choi, I.H. Jo, R. Dong, W.F. Xiang, S.J. Oh, S.H. Heo, M.S. Jo, D.K. Hwang, H.K. Park, M. Chang, M. Hasan, H.S. Hwang, IEDM Tech. Dig. (2006), p. 797
13. R. Schaub, E. Wahlstrom, A. Ronnau, E. Lagsgaard, I. Stensgaard, F. Besenbacher, Science 299, 377 (2003)
14. M.K. Nowotny, T. Bak, J. Nowotny, J. Phys. Chem. B 110, 16270 (2006)
15. H.J. Sim, H.J. Choi, D.S. Lee, M. Chang, D.H. Choi, Y.N. Son, E.H. Lee, W.J. Kim, Y.D. Park, I.K. Yoo, H.S. Hwang, IEDM Tech. Dig. (2005), p. 777
16. H. Pagnia, N. Sotnik, Phys. Status Solidi A 108, 11 (1998)
17. A.K. Ray, C.A. Hogarth, Int. J. Electron. 69, 97 (1990)
18. S.M. Sze, Physics of Semiconductor Devices, 3rd edn. (Wiley, New York, 2007)
19. H. Yang, D. Lee, M.S. Rahman, M. Hasan, H.-S. Jung, H. Hwang, IEEE Electron Device Lett. 27, 435 (2006)
20. D.J. Seong, M.S. Jo, D.S. Lee, H.S. Hwang, Electrochem. Solid-State Lett. 10, H168 (2007)
21. R. Dong, W.F. Xiang, D.S. Lee, S.J. Oh, D.J. Seong, S.H. Heo, H.J. Choi, M.J. Kwon, M. Chang, M.S. Jo, M. Hasan, H.S. Hwang, Appl. Phys. Lett. 90, 182118 (2007)
22. R. Dong, Q. Wang, L.D. Chen, D.S. Shang, T.L. Chen, X.M. Li, W.Q. Zhang, Appl. Phys. A 81, 265 (2005)
23. J.R. Jameson, Y. Fukuzumi, Z. Wang, P. Griffin, K. Tsunoda, G.I. Meijer, Y. Nishi, Appl. Phys. Lett. 91, 112101 (2007)