-
1
-
-
21644443347
-
Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
-
I.G. Baek, M.S. Lee, S. Seo, M.J. Lee, D.H. Seo, and D.S. Suh Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses IEDM Tech Dig 76 2004 587
-
(2004)
IEDM Tech Dig
, vol.76
, pp. 587
-
-
Baek, I.G.1
Lee, M.S.2
Seo, S.3
Lee, M.J.4
Seo, D.H.5
Suh, D.S.6
-
3
-
-
34248671691
-
2/Pt thin film stack - A candidate for a non-volatile ReRAM
-
2/Pt thin film stack - a candidate for a non-volatile ReRAM Microelectron Eng 84 2007 1982
-
(2007)
Microelectron Eng
, vol.84
, pp. 1982
-
-
Schroeder, H.1
Jeong, D.S.2
-
5
-
-
29744470409
-
Electrode dependence of resistance switching in polycrystalline NiO films
-
S. Seo, M.J. Lee, D.C. Kim, S.E. Ahn, B.H. Park, and Y.S. Kim Electrode dependence of resistance switching in polycrystalline NiO films Appl Phys Lett 87 2005 263507
-
(2005)
Appl Phys Lett
, vol.87
, pp. 263507
-
-
Seo, S.1
Lee, M.J.2
Kim, D.C.3
Ahn, S.E.4
Park, B.H.5
Kim, Y.S.6
-
6
-
-
49149097171
-
Effects of metal electrodes on the resistive memory switching property property of NiO thin films
-
C.B. Lee, B.S. Kang, A. Benayad, M.J. Lee, S.E. Ahn, and K.H. Kim Effects of metal electrodes on the resistive memory switching property property of NiO thin films Appl Phys Lett 93 2008 042115
-
(2008)
Appl Phys Lett
, vol.93
, pp. 042115
-
-
Lee, C.B.1
Kang, B.S.2
Benayad, A.3
Lee, M.J.4
Ahn, S.E.5
Kim, K.H.6
-
8
-
-
0034830446
-
Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum: Measurements by the four-probe method and by Kelvin force microscopy
-
J. Olivier, B. Servet, M. Vergnolle, M. Mosca, and G. Garry Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum: measurements by the four-probe method and by Kelvin force microscopy Synth Met 122 2007 87
-
(2007)
Synth Met
, vol.122
, pp. 87
-
-
Olivier, J.1
Servet, B.2
Vergnolle, M.3
Mosca, M.4
Garry, G.5
-
9
-
-
0000023821
-
Photoreduction and oxidation of as-deposited microcrystalline indium oxide
-
C. Xirouchaki, G. Kiriakidis, and T.F. Pedersen Photoreduction and oxidation of as-deposited microcrystalline indium oxide J Appl Phys 79 1996 9349
-
(1996)
J Appl Phys
, vol.79
, pp. 9349
-
-
Xirouchaki, C.1
Kiriakidis, G.2
Pedersen, T.F.3
-
10
-
-
84975660029
-
Materials for optical coatings in the ultraviolet
-
F. Rainer, W.H. Lowdermilk, D. Milam, C.K. Carniglia, T.T. Hart, and T.L. Lichtenstein Materials for optical coatings in the ultraviolet Appl Opt 24 1985 496
-
(1985)
Appl Opt
, vol.24
, pp. 496
-
-
Rainer, F.1
Lowdermilk, W.H.2
Milam, D.3
Carniglia, C.K.4
Hart, T.T.5
Lichtenstein, T.L.6
-
11
-
-
0029342219
-
Recovery of vacuum ultraviolet irradiated metal-oxide-silicon systems
-
K.G. Druijf, J.M.M. Nijs, E. Drift, E.H.A. Granneman, and P. Balk Recovery of vacuum ultraviolet irradiated metal-oxide-silicon systems J Appl Phys 78 1995 306
-
(1995)
J Appl Phys
, vol.78
, pp. 306
-
-
Druijf, K.G.1
Nijs, J.M.M.2
Drift, E.3
Granneman, E.H.A.4
Balk, P.5
-
12
-
-
34548263330
-
Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
-
C.B. Lee, B.S. Kang, M.J. Lee, S.E. Ahn, G. Stefanovich, and W.X. Xianyu Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films Appl Phys Lett 91 2007 082104
-
(2007)
Appl Phys Lett
, vol.91
, pp. 082104
-
-
Lee, C.B.1
Kang, B.S.2
Lee, M.J.3
Ahn, S.E.4
Stefanovich, G.5
Xianyu, W.X.6
-
15
-
-
34547191632
-
Decrease in switching voltage fluctuation of Pt/NiO/Pt structure by process control
-
R. Jung, M.J. Lee, S. Seo, D.C. Kim, G.S. Park, and K. Kim Decrease in switching voltage fluctuation of Pt/NiO/Pt structure by process control Appl Phys Lett 91 2007 022112
-
(2007)
Appl Phys Lett
, vol.91
, pp. 022112
-
-
Jung, R.1
Lee, M.J.2
Seo, S.3
Kim, D.C.4
Park, G.S.5
Kim, K.6
-
17
-
-
34547902189
-
Low-power switching of nonvolatile resistive memory using Hafnium Oxide
-
H.Y. Lee, P.S. Chen, C.C. Wang, S. Maikap, P.J. Tzeng, and C.H. Lin Low-power switching of nonvolatile resistive memory using Hafnium Oxide Jpn J Appl Phys 46 2007 2175
-
(2007)
Jpn J Appl Phys
, vol.46
, pp. 2175
-
-
Lee, H.Y.1
Chen, P.S.2
Wang, C.C.3
Maikap, S.4
Tzeng, P.J.5
Lin, C.H.6
-
19
-
-
67650399207
-
Abnormal resistance switching behaviours of NiO thin films: Possible occurrence of both formation and rupturing of conducting channels
-
C. Liu, S.C. Chae, J.S. Lee, S.H. Chang, S.B. Lee, and D.W. Kim Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels J Phys D 42 2009 015506
-
(2009)
J Phys D
, vol.42
, pp. 015506
-
-
Liu, C.1
Chae, S.C.2
Lee, J.S.3
Chang, S.H.4
Lee, S.B.5
Kim, D.W.6
-
20
-
-
65549135687
-
Excimer laser beam/ITO interaction: From laser processing to surface reaction
-
G. Legeay, X. Castel, R. Benzerga, and Pinel Excimer laser beam/ITO interaction: from laser processing to surface reaction J Phys State Solid C 5 2008 3248
-
(2008)
J Phys State Solid C
, vol.5
, pp. 3248
-
-
Legeay, G.1
Castel, X.2
Benzerga, R.3
Pinel4
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