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Volumn 50, Issue 12, 2010, Pages 1931-1934

Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL ISSUES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; FORMING PROCESS; I - V CURVE; NETWORK SIMULATION; RESET VOLTAGE; RESISTIVE SWITCHING; SWITCHING CHARACTERISTICS; ULTRA-VIOLET LIGHT; ULTRAVIOLET LIGHTS; UV LASER EXPOSURE;

EID: 78649448172     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.05.012     Document Type: Article
Times cited : (15)

References (20)
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    • Electrode dependence of resistance switching in polycrystalline NiO films
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    • Seo, S.1    Lee, M.J.2    Kim, D.C.3    Ahn, S.E.4    Park, B.H.5    Kim, Y.S.6
  • 6
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    • Effects of metal electrodes on the resistive memory switching property property of NiO thin films
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    • J. Olivier, B. Servet, M. Vergnolle, M. Mosca, and G. Garry Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum: measurements by the four-probe method and by Kelvin force microscopy Synth Met 122 2007 87
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  • 9
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    • Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.