Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Journal of Alloys and Compounds

Volumn 486, Issue 1-2, 2009, Pages 458-461

  Cao, Xun ^a,b   Li, Xiaomin ^a   Yu, Weidong ^a   Zhang, Yiwen ^a,b   Yang, Rui ^a,b   Liu, Xinjun ^a   Kong, Jingfang ^c   Shen, Wenzhong ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Oxidation; Oxide materials; Resistive switching; Thin films

Indexed keywords

HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OXIDATION TEMPERATURE; OXIDE MATERIALS; POLYCRYSTALLINE; PT(111); RAMAN SPECTRA; RESET VOLTAGE; RESISTANCE RATIO; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RUTILE PHASE; STRUCTURAL CHARACTERISTICS; SWITCHING VOLTAGES; THERMAL OXIDATION; TI FILM; TIO;

OXIDATION; OXIDE MINERALS; PLATINUM; RAMAN SPECTROSCOPY; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; TITANIUM; TITANIUM OXIDES;

OXIDE FILMS;

EID: 70350087350     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.06.175     Document Type: Article

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