Approaches for improving the performance of filament-type resistive switching memory

Chinese Science Bulletin

Volumn 56, Issue 4-5, 2011, Pages 461-464

  Lian, WenTai ^a,b   Long, ShiBing ^a   Lü, HangBing ^a   Liu, Qi ^a,b   Li, YingTao ^a   Zhang, Sen ^a   Wang, Yan ^a   Huo, ZongLiang ^a   Dai, YueHua ^b   Chen, JunNing ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

Author keywords

Conductive filament (CF); Non volatile memory; Resistive random access memory (RRAM)

Indexed keywords

EID: 79952162520     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-010-4255-4     Document Type: Article

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