Nonvolatile crossbar switch using TiOx/TaSiOy Solid electrolyte

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1987-1995

  Tada, Munehiro ^a   Sakamoto, Toshitsugu ^a   Banno, Naoki ^a   Aono, Masakazu ^b   Hada, Hiromitsu ^a   Kasai, Naoki ^a  

^a NEC CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Crossbar switch; field programmable gate array (FPGA); nonvolatile memory; PLD; reconfigurable logic; solid electrolyte; switch

Indexed keywords

BACK-END-OF-LINE PROCESSING; CMOS CIRCUITS; CROSSBAR SWITCH; LOW VOLTAGES; NANOBRIDGE; NON-VOLATILE; NON-VOLATILE MEMORIES; ON-RESISTANCE; PROCESS STEPS; RECONFIGURABLE LOGIC; SELECT TRANSISTOR; SOLID ELECTROLYTE SWITCH; SWITCHING CHARACTERISTICS; TIO;

CROSSBAR EQUIPMENT; LOGIC GATES; PROGRAMMABLE LOGIC CONTROLLERS; SOLID ELECTROLYTES; SWITCHING NETWORKS;

CMOS INTEGRATED CIRCUITS;

EID: 77955172068     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051191     Document Type: Article

References (32)

1. R. Nebashi, N. Sakimura, H. Honjo, S. Saito, Y. Ito, S. Miura, Y. Kato, K. Mori, Y. Ozaki, Y. Kobayashi, N. Ohshima, K. Kinoshita, T. Suzuki, K. Nagahara, N. Ishiwata, K. Suemitsu, S. Fukami, H. Hada, T. Sugibayashi, and N. Kasai, "A 90 nm 12 ns 32 Mb 2T1MTJ MRAM," in Proc. IEEE Solid-State Circuits Conf.-Dig. Tech. Papers, Feb. 8-12, 2009, pp. 462-463.
2. D. Ielmini, D. Sharma, S. Lavizzari, and A. L. Lacaita, "Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part I: Experimental study," IEEE Trans. Electron Devices, vol.56, no.5, pp. 1070-1077, May 2009.
3. Y. Sasago, M. Kinoshita, T. Morikawa, K. Kurotsuchi, S. Hanzawa, T. Mine, A. Shima, Y. Fujisaki, H. Kume, H. Moriya, N. Takaura, and K. Torii, "Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode," in VLSI Symp. Tech. Dig., 2009, pp. 24-25.
4. K. Terabe, T. Nakayama, T. Hasegawa, andM. Aono, "Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction," J. Appl. Phys., vol.91, no.12, pp. 10 110-10 114, Jun. 2002.
5. M. N. Kozicki, M. Yun, L. Hilt, and A. Singh, "Applications of programmable resistance changes in metal-doped chalcogenides," in Proc. Electrochem. Soc., Pennington, NJ, 1999, pp. 298-309.
6. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol.6, no.11, pp. 833-839, Nov. 2007.
7. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenge," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Jul. 2009.
8. C. Cagli, F. Nardi, and D. Ielmini, "Modeling of set/reset operations in NiO-based resistive-switching memory devices," IEEE Trans. Electron Devices, vol.56, no.8, pp. 1712-1720, Aug. 2009.
9. L. Goux, J. G. Lisoni, X. P. Wang, M. Jurczak, and D. J. Wouters, "Optimized Ni oxidation in 80-nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cells," IEEE Trans. Electron Devices, vol.56, no.10, pp. 2363-2368, Oct. 2009.
10. 2/Al-structured RRAM," IEEE Trans. Electron Devices, vol.56, no.12, pp. 3049-3054, Dec. 2009.
11. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol.77, no.1, pp. 139-141, Jul. 2000.
12. T. Sakamoto, S. Kaeriyama, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, and M. Aono, "A nonvolatile programmable solid electrolyte nanometer switch," in Proc. IEEE Solid- State Circuits Conf.-Dig. Tech. Papers, 2004, pp. 290-291.
13. T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, and M. Aono, "Nanometer-scale switches using copper sulfide," Appl. Phys. Lett., vol.82, no.18, pp. 3032-3034, May 2003.
14. 5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes," in Proc. IEEE Int. Rel. Phys. Symp., 2009, pp. 395-399.
15. 5 resistive switch," Appl. Phys. Lett., vol.91, no.9, pp. 092 110-1-092 110-3, Aug. 2007.
16. 2," IEEE Trans. Electron Devices, vol.54, no.10, pp. 2762-2768, Oct. 2007.
17. 2/Pt structure and resultant Cu ion diffusion," Appl. Phys. Express, vol.2, no.6, p. 061 401, May 2009.
18. 2 films," Appl. Phys. Lett., vol.90, no.11, p. 113 501, Mar. 2007.
19. 2/Ag molecular electronic junctions," Langmuir, vol.22, no.25, pp. 10 689-10 696, Dec. 2006.
20. 2-based ReRAM with implanted metal ions," in Proc. ESSDERC, Sep. 14-18, 2009, pp. 221-224.
21. 2," IEEE Electron Device Lett., vol.29, no.5, pp. 434-437, May 2008.
22. Y. Tsuji, T. Sakamoto, N. Banno, H. Hada, and M. Aono, "Off-state and turn-on characteristics of solid electrolyte switch," Appl. Phys. Lett., vol.96, no.2, p. 023 504, Jan. 2010.
23. N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa, and M. Aono, "Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch," IEEE Trans. Electron Devices, vol.55, no.11, pp. 3283-3287, Nov. 2008.
24. M. Tada, N. Inoue, and Y. Hayashi, "Performance modeling of Cu/low-k interconnect for 32 nm-node and beyond," IEEE Trans. Electron Devices, vol.56, no.9, pp. 1852-1861, Sep. 2009.
25. S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, and M. Aono, "A nonvolatile programmable solid-electrolyte nanometer switch," IEEE J. Solid-State Circuits, vol.40, no.1, pp. 168-176, Jan. 2005.
26. G. S. Snider and R. S.Williams, "Nano/CMOS architectures using a fieldprogrammable nanowire interconnect," Nanotechnology, vol.18, no.3, pp. 035 204-035 215, Jan. 2007.
27. M. Liu and W. Wang, "Application of nanojunction-based RRAM to reconfigurable IC," Micro Nano Lett., vol.3, no.3, pp. 101-105, Sep. 2008.
28. M. Tada, M. Abe, N. Furutake, F. Ito, T. Tonegawa, M. Sekine, and Y. Hayashi, "Reliability improvement of 65 nm-node, Cu dual damascene interconnects by impurity-doping and interface-strengthening," IEEE Trans. Electron Devices, vol.54, no.8, pp. 1867-1877, Aug. 2007.
29. Z. TÖkei, Y.-L. Li, and G. P. Beyer, "Reliability challenges for copper low-k dielectrics and copper diffusion barriers," Microelectron. Reliab., vol.45, no.9-11, pp. 1436-1442, Sep.-Nov. 2005.
30. M. Ueki, M. Hiroi, N. Ikarashi, T. Onodera, N. Furutake, N. Inoue, and Y. Hayashi, "Effects of Ti addition on via reliability in Cu dual damascene interconnects," IEEE Trans. Electron Devices, vol.49, no.1, pp. 89-95, Jan. 2002.
31. M. Tada, T. Sakamoto, Y. Tsuji, N. Banno, Y. Saito, Y. Yabe, S. Ishida, M. Terai, S. Kotsuji, N. Iguchi, M. Aono, H. Hada, and N. Kasai, "Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic," in IEDM Tech. Dig., 2009, pp. 493-496.
32. T. Sakamoto, M. Tada, N. Banno, Y. Tsuji, Y. Saitoh, Y. Yabe, H. Hada, N. Iguchi, and M. Aono, "Nonvolatile solid-electrolyte switch embedded into Cu interconnect," in VLSI Symp. Tech. Dig., 2009, pp. 130-131.