SCOPUS 정보 검색 플랫폼

Volumn 46, Issue 4, 2013, Pages

Effect of electrode type in the resistive switching behaviour of TiO 2 thin films

(6) Hernandez Rodriguez E a Marquez Herrera A b Zaleta Alejandre, E c Melendez Lira M c Cruz, W De La d Zapata Torres, M a

a INSTITUTO POLITÉCNICO NACIONAL (Mexico)

b UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ (Mexico)

c DEPARTAMENTO DE FÍSICA (Mexico)

d UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CONDUCTING FILAMENT; CONDUCTION MECHANISM; ELECTRODE TYPE; FILM OXIDE; HIGH-RESISTANCE STATE; I - V CURVE; I-V MEASUREMENTS; LOW-RESISTANCE STATE; METAL ELECTRODES; POOLE-FRENKEL; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RF-SPUTTERING; SCHOTTKY; TIO; TRANSPORT CHARACTERISTICS;

ELECTRIC RESISTANCE; GIANT MAGNETORESISTANCE; SWITCHING SYSTEMS;

TITANIUM DIOXIDE;

EID: 84872418923 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/4/045103 Document Type: Article

Times cited : (46)

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