TiN electrode-induced bipolar resistive switching of TiO2 thin films

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

  Do, Young Ho ^a   Kwak, June Sik ^a   Bae, Yoon Cheol ^a   Lee, Jong Hyun ^a   Kim, Yongmin ^b   Im, Hyunsik ^b   Hong, Jin Pyo ^a  

^a Hanyang University   (South Korea)

^b Dongguk University   (South Korea)

Author keywords

Nonvolatile memory; ReRAM; Resistive switching

Indexed keywords

CLOCK WISE; CONDUCTING PATHS; COUNTER-CLOCKWISE; FORMING PROCESS; HIGH RELIABLE; MEMORY SWITCHING; NON-VOLATILE MEMORIES; OXYGEN IONS; OXYGEN RESERVOIR; POLYCRYSTALLINE; RELATIVE POSITIONS; RESISTIVE SWITCHING; RETENTION TIME; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS; SWITCHING SPEED; TIN ELECTRODES; TIO;

OXYGEN; PLATINUM; SWITCHING SYSTEMS; THIN FILMS; TITANIUM NITRIDE;

SWITCHING;

EID: 77649234132     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.017     Document Type: Article

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