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Volumn 45, Issue 37, 2012, Pages

Nonvolatile bipolar resistive switching in an Ag/TiO 2/Nb: SrTiO 3/In device

(9) Zhu, Yongdan a,b Li, Meiya a Zhou, Hai a Hu, Zhongqiang a Liu, Xiaolian a Fang, Xiaoli a Sebo, Bobby a Fang, Guojia a Zhao, Xingzhong a

a WUHAN UNIVERSITY (China)

b HUBEI UNIVERSITY FOR NATIONALITIES (China)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD VOLTAGE; HIGH POTENTIAL; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MAXIMUM VALUES; MULTILEVEL MEMORY; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING; REVERSE VOLTAGES; SRTIO; TIO;

HETEROJUNCTIONS; PULSED LASER DEPOSITION; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

STRONTIUM TITANATES;

EID: 84866002494 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/37/375303 Document Type: Article

Times cited : (41)

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