SCOPUS 정보 검색 플랫폼

Volumn 63, Issue 1, 2011, Pages 115-118

Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

(8) Sung, Min Gyu a Kim, Sook Joo a Joo, Moon Sig a Roh, Jae Sung a Ryu, Cheolhwi b Hong, Seunghun c Kim, Heonho d Kim, Yong Soo d

a Hynix Semiconductor Inc (South Korea)

b Hoseo University (South Korea)

c Seoul National University (South Korea)

d University of Ulsan (South Korea)

Author keywords

Interfacial reaction; Oxygen vacancy; Resistive switching memory; Switching mechanism

Indexed keywords

BOTTOM ELECTRODES; INSULATING LAYERS; LOCAL HEATING; MEMORY SWITCHING; NEGATIVE BIAS; OXYGEN DEFICIENT; RESISTIVE SWITCHING MEMORY; SHORT CIRCUIT; SWITCHING MECHANISM; TIO; VOLTAGE SWEEP;

INSULATION; OXIDES; OXYGEN; SWITCHING; TITANIUM; TITANIUM DIOXIDE;

OXYGEN VACANCIES;

EID: 80051793222 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2011.05.007 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.