Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience

Surface and Coatings Technology

Volumn 231, Issue , 2013, Pages 399-402

  Lai, Chun Hung ^a   Chen, Chia Hung ^b   Tseng, Tseung Yuen ^b  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Anatase; Resistive switching; Sol gel; XPS

Indexed keywords

AIR ATMOSPHERE; FIRING CONDITIONS; INTERFACE PROPERTY; OPERATION VOLTAGE; OXYGEN CONTENT; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING MODES;

OXYGEN; PHOTOELECTRONS; SOL-GEL PROCESS; SOL-GELS; SWITCHING SYSTEMS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM DIOXIDE;

EID: 84882898075     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2012.05.045     Document Type: Article

References (23)

1. Seo S., Lee M.J., Kim D.C., Ahn S.E., Park B., Kim Y.S., Yoo I.K., Byun I.S., Hwang I.R., Kim S.H., Kim J., Choi J.S., Lee J.H., Jeon S.H., Hong S.H., Park B.H. Appl. Phys. Lett. 2005, 87:263507.
2. Choi B.J., Jeong D.S., Kim S.K., Rohde C., Choi S., Oh J.H., Kim H.J., Hwang C.S., Szot K., Waser R., Reichenberg B., Tiedke S. J. Appl. Phys. 2005, 98:033715.
3. Dongsoo L., Hyejung C., Hyunjun S., Dooho C., Hyunsang H., Myoung-Jae L., Sun-Ae S., Yoo I.K. IEEE Electron Device Lett. 2005, 26:719.
4. Kim K.M., Choi B.J., Shin Y.C., Choi S., Hwang C.S. Appl. Phys. Lett. 2007, 91:012907.
5. Russo U., Ielmini D., Cagli C., Lacaita A.L. IEEE Trans. Electron Devices 2009, 56:186.
6. Hou T., Lin K., Shieh J., Lin J., Chou C., Lee Y. Appl. Phys. Lett. 2011, 98:103511.
7. Schroeder H., Jeong D.S. Microelectron. Eng. 2007, 84:1982.
8. Zhang F., Li X.M., Gao X.D., Wu L., Cao X., Liu X.J., Yang R. J. Appl. Phys. 2011, 109:104504.
9. Shimeng Y., Wong H.S.P. IEEE Electron Device Lett. 2010, 31:1455.
10. Langlet M., Jenouvrier P., Kim A., Manso M., Valdez M.T. J. Sol-Gel Sci. Technol. 2003, 26:759.
11. Rohde C., Choi B.J., Jeong D.S., Choi S., Zhao J., Hwang C.S. Appl. Phys. Lett. 2005, 86:262907.
12. Liu L.-F., Kang J.-F., Xu N., Sun X., Chen C., Sun B., Wang Y., Liu X.-Y., Zhang X., Han R.-Q. Jpn. J. Appl. Phys. 2008, 47:2701.
13. Mao Q.N., Ji Z.G., Xi J.H. J. Phys. D: Appl. Phys. 2010, 43:395104.
14. Fang Z., Yu H.Y., Li X., Singh N., Lo G.Q., Kwong D.L. IEEE Electron Device Lett. 2011, 32:566.
15. Chang Bum L., Dong Soo L., Benayad A., Seung Ryul L., Man C., Myoung-Jae L., Jihyun H., Chang Jung K., Chung U.I. IEEE Electron Device Lett. 2011, 32:399.
16. Lee S.B., Kim A., Lee J.S., Chang S.H., Yoo H.K., Noh T.W., Kahng B., Lee M., Kim C.J., Kang B.S. Appl. Phys. Lett. 2010, 97:093505.
17. Kinoshita K., Tsunoda K., Sato Y., Noshiro H., Yagaki S., Aoki M., Sugiyama Y. Appl. Phys. Lett. 2008, 93:033506.
18. Wan H.J., Zhou P., Ye L., Lin Y.Y., Tang T.A., Wu H.M., Chi M.H. IEEE Electron Device Lett. 2010, 31:246.
19. Bogle K.A., Bachhav M.N., Deo M.S., Valanoor N., Ogale S.B. Appl. Phys. Lett. 2009, 95:203502.
20. Xu N., Liu L., Sun X., Liu X., Han D., Wang Y., Han R., Kang J., Yu B. Appl. Phys. Lett. 2008, 92:232112.
21. Shin J., Kim I., Biju K.P., Jo M., Park J., Lee J., Jung S., Lee W., Kim S., Park S., Hwang H. J. Appl. Phys. 2011, 109:033712.
22. Kwon D.H., Kim K.M., Jand J.H., Jeon J.M., Lee M.H., Kim G.H., Li X.S., Park G.S., Lee B., Han S., Kim M., Hwang C.S. Nat. Nanotechnol. 2010, 5:148.
23. Liu Q., Dou C., Wang Y., Long S., Wang W., Liu M., Zhang M., Chen J. Appl. Phys. Lett. 2009, 95:023501.