Oxygen vacancy filament formation in TiO 2: A kinetic Monte Carlo study

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Li, Duo ^a   Li, Maozhi ^b   Zahid, Ferdows ^a   Wang, Jian ^a   Guo, Hong ^a,c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b RENMIN UNIVERSITY OF CHINA   (China)

^c MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; ATOMISTIC MODELS; CONDUCTING BEHAVIOR; ELECTRONIC DENSITY; EXTERNAL VOLTAGE BIAS; FILAMENT FORMATION; FORMATION PROCESS; GAP STATE; KINETIC MONTE CARLO; KMC SIMULATIONS; MEMRISTOR; OXYGEN VACANCY MIGRATION; STRUCTURAL CONFIGURATIONS; TIME-SCALES; TIO; VACANCY DIFFUSION; VACANCY MIGRATION;

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC DENSITY OF STATES; OXYGEN VACANCIES; THIN FILMS;

TITANIUM DIOXIDE;

EID: 84867550785     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757584     Document Type: Article

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