Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 967-972

  Jeong, Hu Young ^a   Kim, Sung Kyu ^a   Lee, Jeong Yong ^a   Choi, Sung Yool ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; AMORPHOUS TITANIUM OXIDE; DEPOSITION TEMPERATURES; DEVICE STABILITY; FILM DENSITY; HIGH-RESISTANCE STATE; INTERFACE LAYER; LOW-TEMPERATURE GROWN; OXYGEN IONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING PROPERTIES; THICKNESS OF THE FILM; TIO;

ALUMINUM; DURABILITY; OXIDE FILMS; OXYGEN; SWITCHING SYSTEMS; TITANIUM; TITANIUM DIOXIDE;

AMORPHOUS FILMS;

EID: 79959364239     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6278-3     Document Type: Article

References (25)

1. I.G. Baek, M.S. Lee, S. Seo, M.J. Lee, D.H. Seo, D.-S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.-I. Chung, J.T. Moon, Tech. Dig.-Int. Electron Devices Meet. 2004, 587.
2. M.-J. Lee, S. Han, S.H. Jeon, B.H. Park, B.S. Kang, S.-E. Ahn, K.H. Kim, C.B. Lee, C.J. Kim, I.-K. Yoo, D. Seo, X.-S. Li, J.-B. Park, J.-H. Lee, Y. Park, Nano Lett. 9, 1476 (2009).
3. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 98, 033715 (2005).
4. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008).
5. Y.C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 9, 1636 (2009).
6. J.W. Seo, J.-W. Park, K.S. Lim, J.-H. Yang, S.J. Kang, Appl. Phys. Lett. 93, 223505 (2008).
7. K.M. Kim, B.J. Choi, Y.C. Shin, S. Choi, C.S. Hwang, Appl. Phys. Lett. 91, 012907 (2007).
8. K. Tsunoda, Y. Fukuzumi, J.R. Jameson, Z. Wang, P.B. Griffin, Y. Nishi, Appl. Phys. Lett. 90, 113501 (2007).
9. D.S. Jeong, H. Schroeder, R. Waser, Electrochem. Solid-State Lett. 10, G51 (2007).
10. K.M. Kim, B.J. Choi, C.S. Hwang, Appl. Phys. Lett. 90, 242906 (2007).
11. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010).
12. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richter, C. Hacker, D. Gundlach, IEEE Electron Device Lett. 30, 706 (2009).
13. H.Y. Jeong, J.Y. Lee, M.-K. Ryu, S.-Y. Choi, Phys. Status Solidi 4, 28 (2010).
14. H.Y. Jeong, J.Y. Lee, S.-Y. Choi, J.W. Kim, Appl. Phys. Lett. 95, 162108 (2009).
15. H.Y. Jeong, Y.I. Kim, J.Y. Lee, S.-Y. Choi, Nanotechnology 21, 115203 (2010).
16. H.Y. Jeong, J.Y. Lee, S.-Y. Choi, Adv. Funct. Mater. 20, 3912 (2010).
17. A. Rose, Phys. Rev. 97, 1538 (1955).
18. A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, H. Adachi, Phys. Rev. B 70, 224403 (2004).
19. D.S. Shang, Q.Wang, L.D. Chen, R. Dong, X.M. Li, W.Q. Zhang, Phys. Rev. B 73, 245427 (2006).
20. Y. Xia, W. He, L. Chen, X. Meng, Z. Liu, Appl. Phys. Lett. 90, 022907 (2007).
21. S.K. Kim, G.-J. Choi, S.Y. Lee, M. Seo, S.W. Lee, J.H. Han, H.-S. Ahn, S. Han, C.S. Hwang, Adv. Mater. 20, 1429 (2008).
22. S.-L. Li, D.S. Shang, J. Li, J.L. Gang, D.N. Zheng, J. Appl. Phys. 105, 033710 (2009).
23. K. Shono, H. Kawano, T. Yokota, M. Gomi, Appl. Phys. Express 1, 055002 (2008).
24. R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, D. Rinerson, in Proc. IEEE Non-Volatile Memory Technology Symp. (2008), p. 1.
25. W. Shen, R. Dittmann, U. Breuer, R. Waser, Appl. Phys. Lett. 93, 222102 (2008).