Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

Current Applied Physics

Volumn 11, Issue 4 SUPPL., 2011, Pages

  Biju, Kuyyadi P ^a   Liu, Xinjun ^a   Shin, Jungho ^a   Kim, Insung ^a   Jung, Seungjae ^a   Siddik, Manzar ^a   Lee, Joonmyoung ^a   Ignatiev, Alex ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Cross point application; Pt TiO2 W; Rectifying effect; Resistive random access memory (RRAM); Sol gel

Indexed keywords

BISTABLES; BOTTOM ELECTRODES; CHEMICAL BONDING STATE; CROSS-POINT APPLICATION; CROSS-POINT ARRAY; LOW-RESISTANCE STATE; MEMORY DENSITY; RANDOM ACCESS MEMORIES; RECTIFICATION RATIO; RECTIFYING EFFECT; RESISTIVE SWITCHING; REVERSE BIAS; SCHOTTKY CONTACTS; SOLUTION-PROCESSED; SWITCHING MECHANISM; TIO;

CHEMICAL BONDS; CRYSTAL STRUCTURE; DISTILLATION; GELS; PHOTOELECTRON SPECTROSCOPY; RANDOM ACCESS STORAGE; REDOX REACTIONS; SOL-GEL PROCESS; SOL-GELS; SOLS; SWITCHING; SWITCHING SYSTEMS; TITANIUM DIOXIDE; TUNGSTEN; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC RECTIFIERS;

EID: 80455174728     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.07.018     Document Type: Conference Paper

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