Improving the electrical performance of resistive switching memory using doping technology

Chinese Science Bulletin

Volumn 57, Issue 11, 2012, Pages 1235-1240

  Wang, Yan ^a,b   Liu, Qi ^b   Lü, Hang Bing ^b   Long, Shi Bing ^b   Wang, Wei ^a   Li, Ying Tao ^a,b   Zhang, Sen ^b   Lian, Wen Tai ^b   Yang, Jian Hong ^a   Liu, Ming ^b  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

doping technology; non volatile memory; resistive random access memory (RRAM)

Indexed keywords

EID: 84859248089     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-011-4930-0     Document Type: Review

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