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Volumn 111, Issue 7, 2012, Pages

Resistive switching in silicon suboxide films

(9) Mehonic, Adnan a Cueff, Sébastien b Wojdak, MacIej a Hudziak, Stephen a Jambois, Olivier c Labbé, Christophe b Garrido, Blas c Rizk, Richard b Kenyon, Anthony J a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b Ecole Nationale Supérieure des Ingénieurs de Caen (France)

c UNIVERSITY OF BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ACTIVE MATERIAL; AMBIENT CONDITIONS; CONDUCTION PATHS; CONDUCTIVE PATHS; CURRENT-DRIVEN; INTRINSIC PROPERTY; MEMRISTOR; METALLIC IONS; NANO INCLUSION; NANOSTRUCTURED FILMS; NONSTOICHIOMETRIC; PROGRAMMING CURRENTS; RESISTANCE RATIO; RESISTIVE SWITCHING; SILICON SUBOXIDE FILMS; SILICON-BASED; SILICON-RICH OXIDE; SWITCHABLE; SWITCHING MECHANISM; TRANSITION TIME; TRAP ASSISTED TUNNELING;

GRAIN BOUNDARIES; METALLIC COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICA;

SWITCHING SYSTEMS;

EID: 84861719498 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3701581 Document Type: Conference Paper

Times cited : (225)

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