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Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

(3) Oh, Sang Chul a Jung, Ho Yong a,b Lee, Heon a

a Korea University (South Korea)

b Hynix Semiconductor Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; OXIDATION REACTIONS; OXYGEN CONCENTRATIONS; PRIMARY FACTORS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; TIO; TOP-ELECTRODE MATERIALS;

METALS; OXIDATION; PLATINUM; RANDOM ACCESS STORAGE; SECONDARY ION MASS SPECTROMETRY; STAINLESS STEEL; SWITCHING SYSTEMS; THIN FILMS; TITANIUM DIOXIDE;

SWITCHING;

EID: 79960182423 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596576 Document Type: Article

Times cited : (23)

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