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Volumn 14, Issue 10, 2011, Pages

Realization of rectifying and resistive switching behaviors of TiO 2 nanorod arrays for nonvolatile memory

(9) Zhang, Feng a Gan, Xiaoyan a Li, Xiaomin a Wu, Liang a Gao, Xiangdong a Zheng, Renkui a He, Yong a Liu, Xinjun b Yang, Rui c

a SHANGHAI INSTITUTE OF CERAMICS (China)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FORMING PROCESS; LOW-RESISTANCE STATE; MEMORY CELL; NANOROD ARRAYS; NARROW DISTRIBUTION; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SINGLE-CRYSTALLINE; SWITCH ELEMENT; TIO;

CRYSTALLINE MATERIALS; DISTILLATION; NANOWIRES; SWITCHING; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

NANORODS;

EID: 80051646234 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3617442 Document Type: Article

Times cited : (30)

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