SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 3, 2011, Pages

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

(11) Shin, Jungho a Kim, Insung a Biju, Kuyyadi P a Jo, Minseok a Park, Jubong a Lee, Joonmyoung a Jung, Seungjae a Lee, Wootae a Kim, Seonghyun a Park, Sangsu a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-POINT ARRAY; CURRENT PATHS; MEMORY CELL; METAL INSULATOR METALS; NANO-METER-SCALE; RESISTIVE RANDOM ACCESS MEMORY; SIMPLE METALS; TIO; TYPE SELECTION;

EQUIPMENT; METAL INSULATOR BOUNDARIES; METALS; RANDOM ACCESS STORAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM NITRIDE;

MIM DEVICES;

EID: 79951825640 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544205 Document Type: Article

Times cited : (152)

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