SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 16, Issue 5, 2013, Pages 1186-1195

TiO2-based structures for nanoscale memory applications

(1) Frohlich, K a

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

Author keywords

Atomic layer deposition; DRAM; Resistive switching; Thin oxide films

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; FILM PREPARATION; METAL INSULATOR BOUNDARIES; MIM DEVICES; OXIDE FILMS; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

CURRENT STATUS; DYNAMIC RANDOM ACCESS MEMORY; MEMORY APPLICATIONS; METAL-INSULATOR-METAL STRUCTURES; MIM STRUCTURE; NANO SCALE; RESISTIVE SWITCHING; THIN OXIDE FILMS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84885298391 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2012.11.013 Document Type: Review

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.