-
2
-
-
27144559971
-
-
K. Kim, J. H. Choi, J. Choi, and H.-S. Jeong: Proc. Int. Symp. VLSI Technology, 2005, p. 88.
-
(2005)
Proc. Int. Symp. VLSI Technology
, pp. 88
-
-
Kim, K.1
Choi, J.H.2
Choi, J.3
Jeong, H.-S.4
-
4
-
-
36448932248
-
-
H. Tanaka, M. Kido, K. Yahashi, M. Oomura, R. Katsumata, M. Kito, Y. Fukuzumi, M. Sato, Y. Nagata, Y. Matsuoka, Y. Iwata, H. Aochi, and A. Nitayama: Proc. Int. Symp. VLSI Technology, 2007, p. 14.
-
(2007)
Proc. Int. Symp. VLSI Technology
, pp. 14
-
-
Tanaka, H.1
Kido, M.2
Yahashi, K.3
Oomura, M.4
Katsumata, R.5
Kito, M.6
Fukuzumi, Y.7
Sato, M.8
Nagata, Y.9
Matsuoka, Y.10
Iwata, Y.11
Aochi, H.12
Nitayama, A.13
-
5
-
-
39749099420
-
-
N. Shibata, H. Maejima, K. Isobe, K. Iwasa, M. Nakagawa, M. Fujiu, T. Shimizu, M. Honma, S. Hoshi, T. Kawaai, K. Kanebako, S. Yoshikawa, H. Tabata, A. Inoue, T. Takahashi, T. Shano, Y. Komatsu, K. Nagaba, M. Kosakai, N. Motohashi, K. Kanazawa, K. Imamiya, and H. Nakai: Proc. Int. Symp. VLSI Circuits, 2007, p. 190.
-
(2007)
Proc. Int. Symp. VLSI Circuits
, pp. 190
-
-
Shibata, N.1
Maejima, H.2
Isobe, K.3
Iwasa, K.4
Nakagawa, M.5
Fujiu, M.6
Shimizu, T.7
Honma, M.8
Hoshi, S.9
Kawaai, T.10
Kanebako, K.11
Yoshikawa, S.12
Tabata, H.13
Inoue, A.14
Takahashi, T.15
Shano, T.16
Komatsu, Y.17
Nagaba, K.18
Kosakai, M.19
Motohashi, N.20
Kanazawa, K.21
Imamiya, K.22
Nakai, H.23
more..
-
7
-
-
0034315780
-
-
B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi: IEEE Electron Device Lett. 21 (2000) 543.
-
(2000)
IEEE Electron. Device Lett.
, vol.21
, pp. 543
-
-
Eitan, B.1
Pavan, P.2
Bloom, I.3
Aloni, E.4
Frommer, A.5
Finzi, D.6
-
9
-
-
41149120027
-
-
Y. M. Kang, H. J. Joo, J. H. Park, S. K. Kang, J.-H. Kim, S. G. Oh, H. S. Kim, Y. J. Kang, J. Y. Jung, D. Y. Choi, E. S. Lee, S. Y. Lee, H. S. Jeong, and K. Kim: Proc. Int. Symp. VLSI Technology, 2006, p. 124.
-
(2006)
Proc. Int. Symp. VLSI Technology
, pp. 124
-
-
Kang, Y.M.1
Joo, H.J.2
Park, J.H.3
Kang, S.K.4
Kim, J.-H.5
Oh, S.G.6
Kim, H.S.7
Kang, Y.J.8
Jung, J.Y.9
Choi, D.Y.10
Lee, E.S.11
Lee, S.Y.12
Jeong, H.S.13
Kim, K.14
-
12
-
-
0029290956
-
-
C. A. Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott: Nature 374 (1995) 627.
-
(1995)
Nature
, vol.374
, pp. 627
-
-
Araujo, C.A.1
Cuchiaro, J.D.2
McMillan, L.D.3
Scott, M.C.4
Scott, J.F.5
-
13
-
-
78650087438
-
-
B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo: Nature 401 (1999) 63.
-
(1999)
Nature
, vol.401
, pp. 63
-
-
Park, B.H.1
Kang, B.S.2
Bu, S.D.3
Noh, T.W.4
Lee, J.5
Jo, W.6
-
15
-
-
0037436499
-
-
J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh: Science 299 (2003) 1719.
-
(2003)
Science
, vol.299
, pp. 1719
-
-
Wang, J.1
Neaton, J.B.2
Zheng, H.3
Nagarajan, V.4
Ogale, S.B.5
Liu, B.6
Viehland, D.7
Vaithyanathan, V.8
Schlom, D.G.9
Waghmare, U.V.10
Spaldin, N.A.11
Rabe, K.M.12
Wuttig, M.13
Ramesh, R.14
-
17
-
-
4544302440
-
-
N. Nagel, R. Bruchhaus, K. Hornik, U. Egger, H. Zhuang, H.-O. Joachim, T. Röhr, G. Beitel, T. Ozaki, and I. Kunishima: Proc. Int. Symp. VLSI Technology, 2004, p. 146.
-
(2004)
Proc. Int. Symp. VLSI Technology
, pp. 146
-
-
Nagel, N.1
Bruchhaus, R.2
Hornik, K.3
Egger, U.4
Zhuang, H.5
Joachim, H.-O.6
Röhr, T.7
Beitel, G.8
Ozaki, T.9
Kunishima, I.10
-
21
-
-
19744382167
-
-
G. Grynkewich, J. Akerman, P. Brown, B. Butcher, R. W. Dave, M. DeHerrera, M. Durlam, B. N. Engel, J. Janesky, S. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani: MRS Bull. 29 (2004) No. 11, 818.
-
(2004)
MRS Bull.
, vol.29
, Issue.11
, pp. 818
-
-
Grynkewich, G.1
Akerman, J.2
Brown, P.3
Butcher, B.4
Dave, R.W.5
DeHerrera, M.6
Durlam, M.7
Engel, B.N.8
Janesky, J.9
Pietambaram, S.10
Rizzo, N.D.11
Slaughter, J.M.12
Smith, K.13
Sun, J.J.14
Tehrani, S.15
-
22
-
-
20344384250
-
-
J. Åkerman, P. Brown, B. Butcher, R. Dave, M. DeHerrera, M. Durlam, B. Engel, E. Fuchs, M. Griswold, G. Grynkewich, J. Janesky, J. Martin, J. Nahas, S. Pietambaram, N. Rizzo, J. Slaughter, K. Smith, J.-J. Sun, and S. Tehrani: Mater. Res. Soc. Symp. Proc. 830 (2005) 191.
-
(2005)
Mater. Res. Soc. Symp. Proc.
, vol.830
, pp. 191
-
-
Åkerman, J.1
Brown, P.2
Butcher, B.3
Dave, R.4
DeHerrera, M.5
Durlam, M.6
Engel, B.7
Fuchs, E.8
Griswold, M.9
Grynkewich, G.10
Janesky, J.11
Martin, J.12
Nahas, J.13
Pietambaram, S.14
Rizzo, N.15
Slaughter, J.16
Smith, K.17
Sun, J.-J.18
Tehrani, S.19
-
23
-
-
78650135201
-
-
in Japanese
-
T. Sugibayashi, T. Honda, N. Sakimura, K. Nagahara, S. Miura, K. Shimura, K. Tsuji, Y. Fukumoto, H. Honjo, T. Suzuki, Y. Kato, S. Saito, N. Kasai, H. Numata, N. Oshima, R. Nebashi, K. Suemitsu, T. Mukai, K. Mori, S. Fukami, N. Ishiwata, H. Hada, and S. Tahara: IEICE Tech. Rep. ICD 106 (2006) No. 2, p. 61 [in Japanese].
-
(2006)
IEICE Tech. Rep. ICD
, vol.106
, Issue.2
, pp. 61
-
-
Sugibayashi, T.1
Honda, T.2
Sakimura, N.3
Nagahara, K.4
Miura, S.5
Shimura, K.6
Tsuji, K.7
Fukumoto, Y.8
Honjo, H.9
Suzuki, T.10
Kato, Y.11
Saito, S.12
Kasai, N.13
Numata, H.14
Oshima, N.15
Nebashi, R.16
Suemitsu, K.17
Mukai, T.18
Mori, K.19
Fukami, S.20
Ishiwata, N.21
Hada, H.22
Tahara, S.23
more..
-
25
-
-
47249124447
-
-
K. Miura, T. Kawahara, R. Takemura, J. Hayakawa, S. Ikeda, R. Sasaki, H. Takahashi, H. Matsuoka, and H. Ohno: Proc. Int. Symp. VLSI Technology, 2007, p. 234.
-
(2007)
Proc. Int. Symp. VLSI Technology
, pp. 234
-
-
Miura, K.1
Kawahara, T.2
Takemura, R.3
Hayakawa, J.4
Ikeda, S.5
Sasaki, R.6
Takahashi, H.7
Matsuoka, H.8
Ohno, H.9
-
26
-
-
71049148092
-
-
Y. Huai: AAPPS Bull. 18 (2008) No. 6, 33.
-
(2008)
AAPPS Bull.
, vol.18
, Issue.6
, pp. 33
-
-
Huai, Y.1
-
27
-
-
0141830841
-
-
H. Horii, J. H. Yi, J. H. Park, Y. H. Ha, I. G. Beak, S. O. Park, Y. N. Hwang, S. H. Lee, Y. T. Kim, K. H. Lee, U. I. Chung, and J. T. Moon: Proc. Int. Symp. VLSI Technology, 2003, p. 177.
-
(2003)
Proc. Int. Symp. VLSI Technology
, pp. 177
-
-
Horii, H.1
Yi, J.H.2
Park, J.H.3
Ha, Y.H.4
Beak, I.G.5
Park, S.O.6
Hwang, Y.N.7
Lee, S.H.8
Kim, Y.T.9
Lee, K.H.10
Chung, U.I.11
Moon, J.T.12
-
28
-
-
33749515584
-
-
N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Terao, M. Matsuoka, and M. Moniwa: IEDM Tech. Dig., 2005, p. 738.
-
(2005)
IEDM Tech. Dig.
, pp. 738
-
-
Matsuzaki, N.1
Kurotsuchi, K.2
Matsui, Y.3
Tonomura, O.4
Yamamoto, N.5
Fujisaki, Y.6
Kitai, N.7
Takemura, R.8
Osada, K.9
Hanzawa, S.10
Moriya, H.11
Iwasaki, T.12
Kawahara, T.13
Takaura, N.14
Terao, M.15
Matsuoka, M.16
Moniwa, M.17
-
29
-
-
50249088057
-
-
T. Morikawa, K. Kurotsuchi, M. Kinoshita, N. Matsuzaki, Y. Matsui, Y. Fujisaki, S. Hanzawa, A. Kotabe, M. Terao, H. Moriya, T. Iwasaki, M. Matsuoka, F. Nitta, M. Moniwa, T. Koga, and N. Takaura: IEDM Tech. Dig., 2007, p. 307.
-
(2007)
IEDM Tech. Dig.
, pp. 307
-
-
Morikawa, T.1
Kurotsuchi, K.2
Kinoshita, M.3
Matsuzaki, N.4
Matsui, Y.5
Fujisaki, Y.6
Hanzawa, S.7
Kotabe, A.8
Terao, M.9
Moriya, H.10
Iwasaki, T.11
Matsuoka, M.12
Nitta, F.13
Moniwa, M.14
Koga, T.15
Takaura, N.16
-
32
-
-
38549181844
-
-
Y. Fujisaki, N. Matsuzaki, K. Kurotsuchi, T. Morikawa, M. Kinoshita, N. Kitai, S. Hanzawa, H. Moriya, N. Takaura, M. Terao, M. Matsuoka, T. Koga, and M. Moniwa: Mater. Res. Soc. Symp. Proc. 997 (2007) 293.
-
(2007)
Mater. Res. Soc. Symp. Proc.
, vol.997
, pp. 293
-
-
Fujisaki, Y.1
Matsuzaki, N.2
Kurotsuchi, K.3
Morikawa, T.4
Kinoshita, M.5
Kitai, N.6
Hanzawa, S.7
Moriya, H.8
Takaura, N.9
Terao, M.10
Matsuoka, M.11
Koga, T.12
Moniwa, M.13
-
33
-
-
46649084529
-
-
Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzaki, S. Hanzawa, M. Terao, N. Takaura, H. Moriya, T. Iwasaki, M. Moniwa, and T. Koga: IEDM Tech. Dig., 2006, p. 769.
-
(2006)
IEDM Tech. Dig.
, pp. 769
-
-
Matsui, Y.1
Kurotsuchi, K.2
Tonomura, O.3
Morikawa, T.4
Kinoshita, M.5
Fujisaki, Y.6
Matsuzaki, N.7
Hanzawa, S.8
Terao, M.9
Takaura, N.10
Moriya, H.11
Iwasaki, T.12
Moniwa, M.13
Koga, T.14
-
34
-
-
0141538290
-
-
Y. H. Ha, J. H. Yi, H. Horii, J. H. Park, S. H. Joo, S. O. Park, U.-I. Chung, and J. T. Moon: Proc. Int. Symp. VLSI Technology, 2003, p. 175.
-
(2003)
Proc. Int. Symp. VLSI Technology
, pp. 175
-
-
Ha, Y.H.1
Yi, J.H.2
Horii, H.3
Park, J.H.4
Joo, S.H.5
Park, S.O.6
Chung, U.-I.7
Moon, J.T.8
-
35
-
-
34948875674
-
-
Y. C. Chen, C. T. Rettner, S. Raoux, G. W. Burr, S. H. Chen, R. M. Shelby, M. Salinga, W. P. Risk, T. D. Happ, G. M. McClelland, M. Breitwisch, A. Schrott, J. B. Philipp, M. H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. F. Chen, E. Joseph, S. Zaidi, B. Yee, H. L. Lung, R. Bergmann, and C. Lam: IEDM Tech. Dig., 2006, p. 777.
-
(2006)
IEDM Tech. Dig.
, pp. 777
-
-
Chen, Y.C.1
Rettner, C.T.2
Raoux, S.3
Burr, G.W.4
Chen, S.H.5
Shelby, R.M.6
Salinga, M.7
Risk, W.P.8
Happ, T.D.9
McClelland, G.M.10
Breitwisch, M.11
Schrott, A.12
Philipp, J.B.13
Lee, M.H.14
Cheek, R.15
Nirschl, T.16
Lamorey, M.17
Chen, C.F.18
Joseph, E.19
Zaidi, S.20
Yee, B.21
Lung, H.L.22
Bergmann, R.23
Lam, C.24
more..
-
36
-
-
4544229593
-
-
F. Pellizzer, A. Pirovano, F. Ottogalli, M. Magistretti, M. Scaravaggi, P. Zuliani, M. Tosi, A. Benvenuti, P. Besana, S. Cadeo, T. Marangon, R. Morandi, R. Piva, A. Spandre, R. Zonca, A. Modelli, E. Varesi, T. Lowrey, A. Lacaita, G. Casagrande, P. Cappelletti, and R. Bez: Proc. Int. Symp. VLSI Technology, 2004, p. 18.
-
(2004)
Proc. Int. Symp. VLSI Technology
, pp. 18
-
-
Pellizzer, F.1
Pirovano, A.2
Ottogalli, F.3
Magistretti, M.4
Scaravaggi, M.5
Zuliani, P.6
Tosi, M.7
Benvenuti, A.8
Besana, P.9
Cadeo, S.10
Marangon, T.11
Morandi, R.12
Piva, R.13
Spandre, A.14
Zonca, R.15
Modelli, A.16
Varesi, E.17
Lowrey, T.18
Lacaita, A.19
Casagrande, G.20
Cappelletti, P.21
Bez, R.22
more..
-
37
-
-
41149134446
-
-
F. Pellizzer, A. Benvenuti, B. Gleixner, Y. Kim, B. Johnson, M. Magistretti, T. Marangon, A. Pirovano, R. Bez, and G. Atwood: Proc. Int. Symp. VLSI Technology, 2006, p. 122.
-
(2006)
Proc. Int. Symp. VLSI Technology
, pp. 122
-
-
Pellizzer, F.1
Benvenuti, A.2
Gleixner, B.3
Kim, Y.4
Johnson, B.5
Magistretti, M.6
Marangon, T.7
Pirovano, A.8
Bez, R.9
Atwood, G.10
-
39
-
-
37549012274
-
-
T. D. Happ, M. Breitwisch, A. Schrott, J. B. Philipp, M. H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. H. Ho, S. H. Chen, C. F. Chen, E. Joseph, S. Zaidi, G. W. Burr, B. Yee, Y. C. Chen, S. Raoux, H. L. Lung, R. Bergmann, and C. Lam: Proc. Int. Symp. VLSI Technology, 2006, p. 120.
-
(2006)
Proc. Int. Symp. VLSI Technology
, pp. 120
-
-
Happ, T.D.1
Breitwisch, M.2
Schrott, A.3
Philipp, J.B.4
Lee, M.H.5
Cheek, R.6
Nirschl, T.7
Lamorey, M.8
Ho, C.H.9
Chen, S.H.10
Chen, C.F.11
Joseph, E.12
Zaidi, S.13
Burr, G.W.14
Yee, B.15
Chen, Y.C.16
Raoux, S.17
Lung, H.L.18
Bergmann, R.19
Lam, C.20
more..
-
40
-
-
50249091055
-
-
W. S. Chen, C. Lee, D. S. Chao, Y. C. Chen, F. Chen, C. W. Chen, R. Yen, M. J. Chen, W. H. Wang, T. C. Hsiao, J. T. Yeh, S. H. Chiou, M. Y. Liu, T. C. Wang, L. L. Chein, C. Huang, N. T. Shih, L. S. Tu, D. Huang, T. H. Yu, M. J. Kao, and M.-J. Tsai: IEDM Tech. Dig., 2007, p. 319.
-
(2007)
IEDM Tech. Dig.
, pp. 319
-
-
Chen, W.S.1
Lee, C.2
Chao, D.S.3
Chen, Y.C.4
Chen, F.5
Chen, C.W.6
Yen, R.7
Chen, M.J.8
Wang, W.H.9
Hsiao, T.C.10
Yeh, J.T.11
Chiou, S.H.12
Liu, M.Y.13
Wang, T.C.14
Chein, L.L.15
Huang, C.16
Shih, N.T.17
Tu, L.S.18
Huang, D.19
Yu, T.H.20
Kao, M.J.21
Tsai, M.-J.22
more..
-
41
-
-
47249119179
-
-
M. Breitwisch, T. Nirschl, C. F. Chen, Y. Zhu, M. H. Lee, M. Lamorey, G. W. Burr, E. Joseph, A. Schrott, J. B. Philipp, R. Cheek, T. D. Happ, S. H. Chen, S. Zaidr, P. Flaitz, J. Bruley, R. Dasaka, B. Rajendran, S. Rossnage, M. Yang, Y. C. Chen, R. Bergmann, H. L. Lung, and C. Lam: Proc. Int. Symp. VLSI Technology, 2007, p. 100.
-
(2007)
Proc. Int. Symp. VLSI Technology
, pp. 100
-
-
Breitwisch, M.1
Nirschl, T.2
Chen, C.F.3
Zhu, Y.4
Lee, M.H.5
Lamorey, M.6
Burr, G.W.7
Joseph, E.8
Schrott, A.9
Philipp, J.B.10
Cheek, R.11
Happ, T.D.12
Chen, S.H.13
Zaidr, S.14
Flaitz, P.15
Bruley, J.16
Dasaka, R.17
Rajendran, B.18
Rossnage, S.19
Yang, M.20
Chen, Y.C.21
Bergmann, R.22
Lung, H.L.23
Lam, C.24
more..
-
46
-
-
0036923301
-
-
W. W. Zhuang, W. Pan, B. D. Ulrich, J. J. Lee, L. Stecker, A. Burmaster, D. R. Evans, S. T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, K. Sakiyama, Y. Wang, S. Q. Liu, N. J. Wu, and A. Ignatiev: IEDM Tech. Dig., 2002, p. 193.
-
(2002)
IEDM Tech. Dig.
, pp. 193
-
-
Zhuang, W.W.1
Pan, W.2
Ulrich, B.D.3
Lee, J.J.4
Stecker, L.5
Burmaster, A.6
Evans, D.R.7
Hsu, S.T.8
Tajiri, M.9
Shimaoka, A.10
Inoue, K.11
Naka, T.12
Awaya, N.13
Sakiyama, K.14
Wang, Y.15
Liu, S.Q.16
Wu, N.J.17
Ignatiev, A.18
-
48
-
-
43549126477
-
-
A. Sawa: Mater. Today 11 (2008) No. 6, 28.
-
(2008)
Mater. Today
, vol.11
, Issue.6
, pp. 28
-
-
Sawa, A.1
-
50
-
-
33846257227
-
-
Y. Xia, W. He, L. Chen, X. Meng, and Z. Liu: Appl. Phys. Lett. 90 (2007) 022907.
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 022907
-
-
Xia, Y.1
He, W.2
Chen, L.3
Meng, X.4
Liu, Z.5
-
51
-
-
33746638021
-
-
S. H. Jeon, B. H. Park, J. Lee, B. Lee, and S. Han: Appl. Phys. Lett. 89 (2006) 042904.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 042904
-
-
Jeon, S.H.1
Park, B.H.2
Lee, J.3
Lee, B.4
Han, S.5
-
55
-
-
33644552106
-
-
D. Choi, D. Lee, H. Sim, M. Chang, and H. Hwang: Appl. Phys. Lett. 88 (2006) 082904.
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 082904
-
-
Choi, D.1
Lee, D.2
Sim, H.3
Chang, M.4
Hwang, H.5
-
56
-
-
33748501587
-
-
I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu: IEDM Tech. Dig., 2005, p. 750.
-
(2005)
IEDM Tech. Dig.
, pp. 750
-
-
Baek, I.G.1
Kim, D.C.2
Lee, M.J.3
Kim, H.-J.4
Yim, E.K.5
Lee, M.S.6
Lee, J.E.7
Ahn, S.E.8
Seo, S.9
Lee, J.H.10
Park, J.C.11
Cha, Y.K.12
Park, S.O.13
Kim, H.S.14
Yoo, I.K.15
Chung, U.-I.16
Moon, J.T.17
Ryu, B.I.18
-
57
-
-
33751557951
-
-
Y. You, B. So, J. Hwang, W. Cho, S. Lee, T. Chung, C. Kim, and K. An: Appl. Phys. Lett. 89 (2006) 222105.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 222105
-
-
You, Y.1
So, B.2
Hwang, J.3
Cho, W.4
Lee, S.5
Chung, T.6
Kim, C.7
An, K.8
-
58
-
-
33745013331
-
-
D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu: Appl. Phys. Lett. 88 (2006) 232106.
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 232106
-
-
Kim, D.C.1
Lee, M.J.2
Ahn, S.E.3
Seo, S.4
Park, J.C.5
Yoo, I.K.6
Baek, I.G.7
Kim, H.J.8
Yim, E.K.9
Lee, J.E.10
Park, S.O.11
Kim, H.S.12
Chung, U.-I.13
Moon, J.T.14
Ryu, B.I.15
-
60
-
-
78650146874
-
-
K. Kinoshita, C. Yoshida, H. Aso, M. Aoki, and Y. Sugiyama: Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2006, p. 570.
-
(2006)
Ext. Abstr. Int. Conf. Solid State Devices and Materials
, pp. 570
-
-
Kinoshita, K.1
Yoshida, C.2
Aso, H.3
Aoki, M.4
Sugiyama, Y.5
-
61
-
-
33751577023
-
-
M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya: Appl. Phys. Lett. 89 (2006) 223509.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 223509
-
-
Fujimoto, M.1
Koyama, H.2
Konagai, M.3
Hosoi, Y.4
Ishihara, K.5
Ohnishi, S.6
Awaya, N.7
-
63
-
-
33745767057
-
-
B. Choi, S. Choi, K. Kim, Y. Shin, C. Hwang, S. Hwang, S. Cho, S. Park, and S. Hong: Appl. Phys. Lett. 89 (2006) 012906.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 012906
-
-
Choi, B.1
Choi, S.2
Kim, K.3
Shin, Y.4
Hwang, C.5
Hwang, S.6
Cho, S.7
Park, S.8
Hong, S.9
-
64
-
-
34548263330
-
-
C. B. Lee, B. S. Kang, M. J. Lee, S. E. Ahn, G. Stefanovich, W. X. Xianyu, J. B. Park, and B. H. Park: Appl. Phys. Lett. 91 (2007) 082104.
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 082104
-
-
Lee, C.B.1
Kang, B.S.2
Lee, M.J.3
Ahn, S.E.4
Stefanovich, G.5
Xianyu, W.X.6
Park, J.B.7
Park, B.H.8
-
65
-
-
47249149671
-
-
C. Ho, E. K. Lai, M. D. Lee, C. L. Pan, Y. D. Yao, K. Y. Hsieh, R. Liu, and C. Y. Lu: Proc. Int. Symp. VLSI Technology, 2007, p. 228.
-
(2007)
Proc. Int. Symp. VLSI Technology
, pp. 228
-
-
Ho, C.1
Lai, E.K.2
Lee, M.D.3
Pan, C.L.4
Yao, Y.D.5
Hsieh, K.Y.6
Liu, R.7
Lu, C.Y.8
-
66
-
-
43749090963
-
-
Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, and Y. Tokura: IEDM Tech. Dig., 2006, p. 793.
-
(2006)
IEDM Tech. Dig.
, pp. 793
-
-
Hosoi, Y.1
Tamai, Y.2
Ohnishi, T.3
Ishihara, K.4
Shibuya, T.5
Inoue, Y.6
Yamazaki, S.7
Nakano, T.8
Ohnishi, S.9
Awaya, N.10
Inoue, H.11
Shima, H.12
Akinaga, H.13
Takagi, H.14
Akoh, H.15
Tokura, Y.16
-
67
-
-
50249156872
-
-
K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama: IEDM Tech. Dig., 2007, p. 767.
-
(2007)
IEDM Tech. Dig.
, pp. 767
-
-
Tsunoda, K.1
Kinoshita, K.2
Noshiro, H.3
Yamazaki, Y.4
Iizuka, T.5
Ito, Y.6
Takahashi, A.7
Okano, A.8
Sato, Y.9
Fukano, T.10
Aoki, M.11
Sugiyama, Y.12
-
68
-
-
48649109824
-
-
K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, Y. Yamazaki, T. Fukano, S. Yagaki, M. Aoki, and Y. Sugiyama: Proc. Non-Volatile Semiconductor Memory Workshop, 2007, p. 66.
-
(2007)
Proc. Non-Volatile Semiconductor Memory Workshop
, pp. 66
-
-
Kinoshita, K.1
Tsunoda, K.2
Sato, Y.3
Noshiro, H.4
Yamazaki, Y.5
Fukano, T.6
Yagaki, S.7
Aoki, M.8
Sugiyama, Y.9
-
69
-
-
33847759058
-
-
M. Kund, G. Beitel, C.-U. Pinnow, T. Röhr, J. Schumann, R. Symanczyk, K.-D. Ufert, and G. Mueller: IEDM Tech. Dig., 2005, p. 754.
-
(2005)
IEDM Tech. Dig.
, pp. 754
-
-
Kund, M.1
Beitel, G.2
Pinnow, C.-U.3
Röhr, T.4
Schumann, J.5
Symanczyk, R.6
Ufert, K.-D.7
Mueller, G.8
-
71
-
-
39749168513
-
-
H. Hönigschmid, M. Angerbauer, S. Dietrich, M. Dimitrova, D. Gogl, C. Liaw, M. Markert, R. Symanczyk, L. Altimime, S. Bournat, and G. Müller: Proc. Int. Symp. VLSI Circuits, 2006, p. 110.
-
(2006)
Proc. Int. Symp. VLSI Circuits
, pp. 110
-
-
Hönigschmid, H.1
Angerbauer, M.2
Dietrich, S.3
Dimitrova, M.4
Gogl, D.5
Liaw, C.6
Markert, M.7
Symanczyk, R.8
Altimime, L.9
Bournat, S.10
Müller, G.11
-
72
-
-
47249166433
-
-
T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, H. Sunamura, S. Fujieda, K. Terabe, T. Hasegawa, and M. Aono: Proc. Int. Symp. VLSI Technology, 2007, p. 38.
-
(2007)
Proc. Int. Symp. VLSI Technology
, pp. 38
-
-
Sakamoto, T.1
Banno, N.2
Iguchi, N.3
Kawaura, H.4
Sunamura, H.5
Fujieda, S.6
Terabe, K.7
Hasegawa, T.8
Aono, M.9
-
74
-
-
33846990409
-
-
R. Müller, R. Naulaerts, J. Billen, J. Genoe, and P. Heremans: Appl. Phys. Lett. 90 (2007) 063503.
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 063503
-
-
Müller, R.1
Naulaerts, R.2
Billen, J.3
Genoe, J.4
Heremans, P.5
-
79
-
-
78650088822
-
-
J. Karasawa, T. Yasuda, T. Saeki, T. Aoki, S. Moriya, E. Hirai, T. Masuda, T. Kawase, T. Shimoda, D. P. Chu, C. J. Newsome, S. W. Tam, and M. Ishida: Proc. Int. Symp. Application of Ferroelectrics, 2007, 30B-FR5-I1.
-
(2007)
Proc. Int. Symp. Application of Ferroelectrics
-
-
Karasawa, J.1
Yasuda, T.2
Saeki, T.3
Aoki, T.4
Moriya, S.5
Hirai, E.6
Masuda, T.7
Kawase, T.8
Shimoda, T.9
Chu, D.P.10
Newsome, C.J.11
Tam, S.W.12
Ishida, M.13
-
80
-
-
50249171771
-
-
T. Sekitani, Y. Noguchi, S. Nakano, K. Zaitsu, Y. Kato, M. Takamiya, T. Sakurai, and T. Someya: IEDM Tech. Dig., 2007, p. 221.
-
(2007)
IEDM Tech. Dig.
, pp. 221
-
-
Sekitani, T.1
Noguchi, Y.2
Nakano, S.3
Zaitsu, K.4
Kato, Y.5
Takamiya, M.6
Sakurai, T.7
Someya, T.8
-
82
-
-
0344362751
-
-
Edition, Process Integration, Devices and Structures, Tables PIDS5a and PIDS5b
-
International Technology Roadmap for Semiconductors, 2007 Edition, Process Integration, Devices and Structures, p. 35 [Tables PIDS5a and PIDS5b].
-
(2007)
International Technology Roadmap for Semiconductors
, pp. 35
-
-
-
86
-
-
71049162177
-
-
R. Katsumata, M. Kito, Y. Fukuzumi, M. Kido, H. Tanaka, Y. Komori, M. Ishiduki, J. Matsunami, T. Fujiwara, Y. Nagata, L. Zhang, Y. Iwata, R. Kirisawa, H. Aochi, and A. Nitayama: Proc. Int. Symp. VLSI Technology, 2009, p. 136.
-
(2009)
Proc. Int. Symp. VLSI Technology
, pp. 136
-
-
Katsumata, R.1
Kito, M.2
Fukuzumi, Y.3
Kido, M.4
Tanaka, H.5
Komori, Y.6
Ishiduki, M.7
Matsunami, J.8
Fujiwara, T.9
Nagata, Y.10
Zhang, L.11
Iwata, Y.12
Kirisawa, R.13
Aochi, H.14
Nitayama, A.15
-
87
-
-
71049142236
-
-
J. Kim, A. J. Hong, S. M. Kim, E. B. Song, J. H. Park, J. Han, S. Choi, D. Jang, J.-T. Moon, and K. L. Wang: Proc. Int. Symp. VLSI Technology, 2009, p. 186.
-
(2009)
Proc. Int. Symp. VLSI Technology
, pp. 186
-
-
Kim, J.1
Hong, A.J.2
Kim, S.M.3
Song, E.B.4
Park, J.H.5
Han, J.6
Choi, S.7
Jang, D.8
Moon, J.-T.9
Wang, K.L.10
-
88
-
-
78149279688
-
-
W. Kim, S. Choi, J. Sung, T. Lee, C. Park, H. Ko, J. Jung, I. Yoo, and Y. Park: Proc. Int. Symp. VLSI Technology, 2009, p. 188.
-
(2009)
Proc. Int. Symp. VLSI Technology
, pp. 188
-
-
Kim, W.1
Choi, S.2
Sung, J.3
Lee, T.4
Park, C.5
Ko, H.6
Jung, J.7
Yoo, I.8
Park, Y.9
-
89
-
-
71049151625
-
-
J. Jang, H.-S. Kim, W. Cho, H. Cho, J. Kim, S. I. Shim, Y. Jang, J.-H. Jeong, B.-K. Son, D. W. Kim, K. Kim, J.-J. Shim, J. S. Lim, K.-H. Kim, S. Y. Yi, J.-Y. Lim, D. Chung, H.-C. Moon, S. Hwang, J.-W. Lee, Y.-H. Son, U.-I. Chung, and W.-S. Lee: Proc. Int. Symp. VLSI Technology, 2009, p. 192.
-
(2009)
Proc. Int. Symp. VLSI Technology
, pp. 192
-
-
Jang, J.1
Kim, H.-S.2
Cho, W.3
Cho, H.4
Kim, J.5
Shim, S.I.6
Jang, Y.7
Jeong, J.-H.8
Son, B.-K.9
Kim, D.W.10
Kim, K.11
Shim, J.-J.12
Lim, J.S.13
Kim, K.-H.14
Yi, S.Y.15
Lim, J.-Y.16
Chung, D.17
Moon, H.-C.18
Hwang, S.19
Lee, J.-W.20
Son, Y.-H.21
Chung, U.-I.22
Lee, W.-S.23
more..
-
91
-
-
76649133422
-
-
D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang: Nat. Nanotechnol. 5 (2010) 148.
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 148
-
-
Kwon, D.-H.1
Kim, K.M.2
Jang, J.H.3
Jeon, J.M.4
Lee, M.H.5
Kim, G.H.6
Li, X.-S.7
Park, G.-S.8
Lee, B.9
Han, S.10
Kim, M.11
Hwang, C.S.12
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