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Volumn 11, Issue 2 SUPPL., 2011, Pages

Bipolar resistive switching in oxides: Mechanisms and scaling

Author keywords

Mechanism; Resistive switching; Scaling

Indexed keywords

AFM; BIAS POLARITY; DEVICE GEOMETRIES; FE-DOPED; MEMORY ELEMENT; NON-VOLATILE MEMORY TECHNOLOGY; POTENTIAL SCALING; RESISTANCE STATE; RESISTIVE SWITCHING; SCALING; SRTIO; SWITCHABLE; SWITCHING BEHAVIORS; TIO; TRANSITION-METAL OXIDES;

EID: 79960927622     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.10.022     Document Type: Article
Times cited : (9)

References (13)
  • 11
    • 79960906524 scopus 로고    scopus 로고
    • Diploma-Thesis Aachen
    • F. Lentz, Diploma-Thesis, RWTH. Aachen, 2010.
    • (2010) RWTH
    • Lentz, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.