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Journal of the Korean Physical Society

Volumn 58, Issue 3, 2011, Pages 407-410

Improvement of resistive switching uniformity in TiOx films by nitrogen annealing

(9) Li, Yingtao a Wang, Yan a Liu, Su a Long, Shibing b Lv, Hangbing b Liu, Qi b Wang, Qin b Zhang, Sen b Liu, Ming b

a LANZHOU UNIVERSITY (China)

b INSTITUTE OF MICROELECTRONICS (China)

Author keywords

Annealing; Resistive switching; Titanium oxide; Uniformity

Indexed keywords

EID: 79952834019 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.58.407 Document Type: Article

Times cited : (10)

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