Aging process of unipolar resistive switching in microscale cylindrical Fe-base alloy/TiO 2/Au-cells

Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

  Miranda, M A ^a   Gomez Polo C ^a   Gil, A ^a  

^a PUBLIC UNIVERSITY OF NAVARRE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AGING PROCESS; APPLIED VOLTAGES; BLOCKING BARRIER; DEPLETION LAYER; FE-BASE ALLOY; HIGH ELECTRIC FIELDS; MICRO-SCALES; MOBILE SPECIES; RESISTANCE SWITCHING; RESISTIVE SWITCHING; TIO; VOLTAGE SWEEP;

ELECTRIC FIELDS; INTERFACE STATES; MIM DEVICES; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

GOLD;

EID: 84865226669     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4744109     Document Type: Article

References (47)

1. A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
3. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). 10.1038/nature06932 (Pubitemid 351630336)
4. J. Yang, F. Miao, M. Pickett, D. Ohlberg, D. Stewart, C. Lau, and R. Williams, Nanotechnology 20, 215201 (2009). 10.1088/0957-4484/20/21/215201
5. G. S. Snider, Nanotechnology 18, 365202 (2007); 10.1088/0957-4484/18/36/ 365202 (Pubitemid 47413703)
6. G. S. Snider, in IEEE International Symposium on Nanoscale Architectures (2008), p. 85;
7. Y. V. Pershin and M. D. Ventra, Neural Networks 23, 881 (2010); 10.1016/j.neunet.2010.05.001
8. S. Jo, T. Chang, I. Ebong, B. Bhadviya, P. Mazumder, and W. Lu, Nano Lett. 10, 1297 (2010); 10.1021/nl904092h
9. G. Snider, Nanotechnology 22, 015201 (2011). 10.1088/0957-4484/22/1/ 015201
10. S. R. Ovshinsky, Appl. Phys. Lett. 21, 1450 (1968). 10.1103/PhysRevLett. 21.1450
11. L. O. Chua, IEEE Trans. Circuit Theory CT-18, 507 (1971). 10.1109/TCT.1971.1083337
12. J. Strachan, M. Pickett, J. Yang, S. Aloni, A. Kilcoyne, G. Medeiros-Ribeiro, and R. Williams, Adv. Mater. 22, 3573 (2010). 10.1002/adma.201000186
13. Y. C. Bae, A. R. Lee, J. S. Kwak, H. Im, and J. P. Hong, Curr. Appl. Phys. 11 (2), e66-e69 (2011). 10.1016/j.cap.2010.11.125
14. D.-H. Kwon, K. M. Kim, J. H. Jang, and J. M. Jeon, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
15. S. Kirkpatrick, Rev. Mod. Phys. 45, 574 (1973). 10.1103/RevModPhys.45.574
16. A. Ofir, S. Dor, L. Grinis, A. Zaban, T. Dittrich, and J. Bisquert, J. Chem. Phys. 128, 064703 (2008). 10.1063/1.2837807 (Pubitemid 351264590)
17. J. Philibert, Atom Movements: Diffusion and Mass Transport in Solids (EDP Sciences, 1991).
18. W. Jiang, M. Noman, Y. M. Lu, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Appl. Phys. 110, 034509 (2011). 10.1063/1.3622623
19. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mater. 5, 312 (2006); 10.1038/nmat1614
20. K. Szot, R. Dittmann, W. Speier, and R. Waser, Phys. Status Solidi (RRL) 1, 86 (2007). 10.1002/pssr.v1:2
21. J. P. Shi, Y. G. Zhao, H. J. Zhang, H. F. Tian, and X. P. Zhang, Appl. Phys. Lett. 94, 192103 (2009). 10.1063/1.3133353
22. D. S. Jeong, H. Schroeder, U. Breuer, and R. Waser, J. Appl. Phys. 104, 123716 (2008). 10.1063/1.3043879
23. D. S. Jeong, H. Schroeder, and R. Waser, Phys. Rev. B 79, 195317 (2009). 10.1103/PhysRevB.79.195317
24. Y. C. Shin, J. Song, K. M. Kim, B. J. Choi, S. Choi, H. J. Lee, G. H. Kim, T. Eom, and C. S. Hwang, Appl. Phys. Lett. 92, 162904 (2008). 10.1063/1.2912531 (Pubitemid 351590725)
25. H. Fritzsche and S. R. Ovshinsky, J. Non-Cryst. Solids 4, 464 (1970). 10.1016/0022-3093(70)90082-7
26. S. Sze and K. N. Kwok, Physics of Semiconductor Devices (Wiley-Interscience, 2007).
27. C. Gómez-Polo, Y. F. Li, J. Pérez-Landazábal, V. Recarte, and M. Vázquez, Sens. Actuators, A 106, 230 (2003). 10.1016/S0924-4247(03)00173-0
28. C. Gómez-Polo, A. Gil, S. Korili, J. Pérez- Landazábal, C. de la Cruz, J. Olivera, J. Soto-Armaanzas, and I. Mendizábal, Spain Patent No., ES20113026 (2011).
29. U. Diebold, Surf. Sci. Rep. 48, 53 (2003). 10.1016/S0167-5729(02)00100-0
30. J. Tang, M. White, G. D. Stucky, and E. W. McFarland, Electrochem. Commun. 5, 497 (2003). 10.1016/S1388-2481(03)00108-5
31. I. Marri and S. Ossicini, Solid State Commun. 147, 205 (2008). 10.1016/j.ssc.2008.05.018
32. E. McFarland and J. Tang, Nature 421, 616 (2003). 10.1038/nature01316 (Pubitemid 36227665)
33. J. Yang, J. Strachan, F. Miao, M.-X. Zhang, M. Pickett, W. Yi, D. Ohlberg, G. Medeiros-Ribeiro, and R. Williams, Appl. Phys. A 102, 785 (2011). 10.1007/s00339-011-6265-8
34. A. K. See and R. A. Bartynski, Phys. Rev. B 50, 12064 (1994). 10.1103/PhysRevB.50.12064
35. T. P. Chen, M. S. Tse, and X. Zeng, Appl. Phys. Lett. 78, 492 (2001). 10.1063/1.1342214 (Pubitemid 33629942)
36. M. Valden, X. Lai, and D. W. Goodman, Science 281, 1647 (1998). 10.1126/science.281.5383.1647 (Pubitemid 28435574)
37. D. L. Carroll, M. Wagner, M. Rühle, and D. A. Bonnell, Phys. Rev. B 55, 9792 (1997). 10.1103/PhysRevB.55.9792
38. A. Chen, Appl. Phys. Lett. 97, 263505 (2010). 10.1063/1.3532969
39. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 86, 262907 (2005). 10.1063/1.1968416 (Pubitemid 40983220)
40. A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, S. Kaza, and Z. Lan, Appl. Phys. Lett. 92, 013503 (2008). 10.1063/1.2828864
41. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007). 10.1103/PhysRevLett.98.146403 (Pubitemid 46557459)
42. F. Kohlrausch, Pogg. Ann. Phys. Chem. 119, 337 (1863);
43. J. C. Phillips and M. F. Thorpe, Phase Transitions and Self-Organization in Electronic and Molecular Networks (Springer, 2001).
44. B. H. Moeckly, D. K. Lathrop, and R. A. Buhrman, Phys. Rev. B 47, 400 (1993). 10.1103/PhysRevB.47.400
45. A. Ghosh and A. K. Raychaudhuri, Phys. Rev. B 64, 104304 (2001). 10.1103/PhysRevB.64.104304
46. L. Chua and S. M. Kang, Proc. IEEE 64, 209 (1976). 10.1109/PROC.1976. 10092
47. N. Tulina, I. Borisenko, A. Ionov, and I. Shmyt'ko, Solid State Commun. 150, 2089 (2010). 10.1016/j.ssc.2010.09.022