Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

Microelectronic Engineering

Volumn 104, Issue , 2013, Pages 42-47

  Hu, Yushi ^a   Perello, David ^a   Yun, Minhee ^a   Kwon, Deok Hwang ^b   Kim, Miyoung ^b  

^a University of Pittsburgh   (United States)

^b Seoul National University   (South Korea)

Author keywords

Bipolar; Filament; Graphene; ReRAM; Resistive memory; Switching mechanism; Titanium dioxide; Unipolar

Indexed keywords

BIPOLAR; RERAM; RESISTIVE MEMORIES; SWITCHING MECHANISM; UNIPOLAR;

FILAMENTS (LAMP); GRAPHENE; GRAPHITE ELECTRODES; SILICON; SILVER; TITANIUM DIOXIDE;

SWITCHING;

EID: 84871175050     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.11.009     Document Type: Article

References (21)

1. A. Pirovano, A.L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez IEEE Trans. Electron Devices 51 2004 452 459
2. S.H. Jo, K.H. Kim, and W. Lu Nano Lett. 9 2009 870 874
3. J.J. Yang, M.D. Pickett, X. Li, A.A. OhlbergDouglas, D.R. Stewart, and R.S. Williams Nat. Nanotechnol. 3 2008 429 433
4. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya Appl. Phys. Lett. 89 2006 223509-3
5. H.Y. Lee, Y.S. Chen, P.S. Chen, T.Y. Wu, F. Chen, C.C. Wang, P.J. Tzeng, M.J. Tsai, and C. Lien Electron Device Lett. IEEE 31 2010 44 46
6. L. Chua IEEE Trans. Circuit Theory 18 1971 507 519
7. R. Waser, and M. Aono Nat. Mater. 6 2007 833 840
8. S. Akihito Mater. Today 11 2008 28 36
9. Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, and M. Liu ACS Nano 4 2010 6162 6168
10. D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B. Lee, S. Han, M. Kim, and C.S. Hwang Nat. Nanotechnol. 5 2010 148 153
11. D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams Nature 453 2008 80 83
12. A. Beck, J.G. Bednorz, C. Gerber, C. Rossel, and D. Widmer Appl. Phys. Lett. 77 2000 139 141
13. I.G. Baek, M.S. Lee, S. Seo, M.J. Lee, D.H. Seo, D.S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.I. Chung, and J.T. Moon, Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses, in: Electron Devices Meeting, 2004, IEDM Technical Digest, IEEE International, 2004, pp. 587-590. (Pubitemid 40928360)
14. Y. Watanabe, J.G. Bednorz, A. Bietsch, C. Gerber, D. Widmer, A. Beck, and S.J. Wind Appl. Phys. Lett. 78 2001 3738 3740
15. S. Seo, M.J. Lee, D.C. Kim, S.E. Ahn, B.-H. Park, Y.S. Kim, I.K. Yoo, I.S. Byun, I.R. Hwang, S.H. Kim, J.-S. Kim, J.S. Choi, J.H. Lee, S.H. Jeon, S.H. Hong, and B.H. Park Appl. Phys. Lett. 87 2005 263507
16. C.B. Lee, B.S. Kang, A. Benayad, M.J. Lee, S.-E. Ahn, K.H. Kim, G. Stefanovic, Y. Park, and I.K. Yoo Appl. Phys. Lett. 93 2008 042115
17. K. Lin, T. Hou, J. Shieh, J. Lin, C. Chou, and Y. Lee J. Appl. Phys. 109 2011 084104
18. G.H. Han, F. Gunes, J.J. Bae, E.S. Kim, S.J. Chae, H.J. Shin, J.Y. Choi, D. Pribat, and Y.H. Lee Nano Lett. 11 2011 4144 4148
19. F.A. Chudnovskii, L.L. Odynets, A.L. Pergament, and G.B. Stefanovich J. Solid State Chem. 122 1996 95 99
20. K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H.L. Stormer Solid State Commun. 146 2008 351 355
21. X. Guo, C. Schindler, S. Menzel, and R. Waser Appl. Phys. Lett. 91 2007 133513